MOS CAPACITANCES

Dr. Arti Noor,

M. Tech Division, CDAC Noida.
Email : artinoor@cdacnoida.in

9-10-2009 BVD-Lecture-6
 MOSFET CAPACITANCES
No. of capacitances are found as function of:
• Layout geometry.
• Fabrication process.

 Most of them are distributed in nature and

exact calculation is complex.

 Thus one needs some simple model for hand

calculation.
Two types of capacitances :
• Device related.
• Interconnect related.
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Device related parasitic capacitances:

LEFF = Lm – 2 LD(≈0.1µm)
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MOSFET CAPACITANCES (contd. )

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 MOSFET CAPACITANCES (contd. )

OXIDE Capacitances :

Cox = εox / tox

1. Overlap Caps :

CGS0 = Cox W LD
CGD0 = Cox W LD
CGB0 = Cox Wov L

• Do not depend upon bias condition.

• Voltage Independent.
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 MOSFET CAPACITANCES (contd. )

2. Gate-channel Capacitances:

Three Cgs , Cgd , Cgb .

• Cgb : distributed and voltage dependent in real life.

• Cgs : gate-to-channel capacitance between gate and

source terminal.

• Cgd : gate-to-channel capacitance between gate and

drain terminal.
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 Gate-channel Caps (contd. )

• These caps are bias dependent Cgs , Cgd , Cgb .

• To calculate them consider three biasing region.

1. CUT-Off Region: no inversion, S/D not

connected.

Cgb = Cox W L.

Cgs = Cgd = 0.
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 Gate-channel Caps (contd. )

2. Linear- Region: inversion layer exists and

shields the bulk from gate electric field.

Cgb = 0.

Cgs = Cgd =

= ½ Cox W L.

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 Gate-channel Caps (contd. )

3. Saturation- Region: inversion is not upto drain.

Source is connected to channel and shielded
from bulk.

Cgb = cgd = 0.

Cgs = 2/3 Cox W L.

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Total Oxide Caps (contd. )

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Total Oxide Caps (contd. )

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 Junction Capacitances

• Csb and Cdb source-substrate and drain-substrate

caps.
• Exists because of depletion region embedded in the
bulk.
• Voltage dependent and is function of applied terminal
voltage.

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 Junction Capacitances (contd.)

• Simplified picture of diffusion to calculate Caps.

• Abrupt junction is assumed for simplicity.
• 2,3,4 junctions are surrounded by sidewall. 1 is facing
channel and 5 is bottom jn and facing bulk.

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 Junction Capacitances (contd.)

• P+ is 10 x NA thus caps associated with this are

different than other junction caps.

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 Junction Capacitances (contd.)

• Reverse biased N+P junction’s depletion layer width

caculation.
• NA and ND doping densities and applied voltage is V.

V is External
Potential

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 Junction Capacitances (contd.)

• The charge stored in this area and capacitance are

The final expression for Cj is

Cj(V) = A Cj0 / ( 1- V/ Φ0 )m where

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 Junction Capacitances (contd.)

• This junction capacitance depends upon biasing.

• With changing bias its estimation is difficult.
• Thus large signal average junction cap, known as
equivalent cap, is calculated between two known
voltages.

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 Junction Capacitances (contd.)

• Sidewall Junction Capacitancs.

Zero-bias Sidewall cap per unit length is

Since all sidewalls have junction depth Xj.

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 Junction Capacitances (contd.)
• Again one has to calculate equivalent large signal Sidewall
Junction Capacitances.

P is equal to sum of three sides.

Total junction capacitance is equal to

Cdb = A Cj0 Keq + P Cj0sw Xj Keqsw

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 EXAMPLE
Calculate the total junction capacitance at drain side for NMOST.
Given :

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 EXAMPLE
Assume Bulk is at zero-bias and drain voltage varies from 0.5V to
5V.
Solution :
Cdb = A Cj0 Keq + P Cj0sw Xj Keqsw

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EXAMPLE

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EXAMPLE

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EXAMPLE

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EXAMPLE

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 Next Class Topic

MOSFET SPICE Models.

(chapter-4)

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