Professional Documents
Culture Documents
icsBJT, CMOS
Reference Books
1
Electronics Fundamentals:
Circuits, Devices, and
Applications
Electronic circuit analysis and
Design
Thomas L.
Floyd
Donald A ,
Neaman
Pearson
Education
Inc.
Irwin
Microelectronics:DIGITAL AND
ANALOG CIRCUITS AND
SYSTEMS
Jacob Millman,
Arvin Grabel
McGrawHill
Microelectronic Circuits
Oxford
Universit
y Press
Objectives
The History of VLSI
Describe the basic structure and operation of bipolar
junction transistors (BJT)
Describe the basic structure and operation of
MOSFETs
Describe the basic structure and operation of CMOS
Logic
Gate
count
Production
1950
1961
----
----
10
1966
1971
1980
MSI
LSI
100
1000
20000
1000
20000
8bit
500,00
0
16/32b
its
ROM
RAM
1985
>
1990
>
500,00 10,000,
0
000
SOC
Architecture of BJTs
The bipolar junction transistor (BJT) is
constructed with three doped semiconductor
regions separated by two pn junctions
Regions are called emitter, base and collector
Architecture of BJTs
There are two types of BJTs, the npn and pnp
The two junctions are termed the base-emitter junction and
the base-collector junction
The term bipolar refers to the use of both holes and
electrons as charge carriers in the transistor structure
In order for the transistor to operate properly, the two
junctions must have the correct dc bias voltages
the base-emitter (BE) junction is forward biased(>=0.7V
for Si, >=0.3V for Ge)
the base-collector (BC) junction is reverse biased
Thomas L. Floyd
Electronics Fundamentals, 6e
Electric Circuit Fundamentals, 6e
Operation of BJTs
BJT will operates in one of following
four region
Operation of BJTs
DC Analysis of BJTs
Transistor Currents:
IE = I C + I B
alpha (DC)
IC = DCIE
beta (DC)
IC = DCIB
DC typically has a value between 20 and 200
DC Analysis of BJTs
DC voltages for the biased transistor:
Collector voltage
VC = VCC - ICRC
Base voltage
VB = VE + VBE
for silicon transistors, VBE = 0.7 V
for germanium transistors, VBE = 0.3 V
Q-point
The base current, IB, is
established by the
base bias
The point at which the
base current curve
intersects the dc load
line is the quiescent or
Q-point for the circuit
Q-point
DC Analysis of BJTs
The voltage divider
biasing is widely
used
Input resistance is:
RIN DCRE
The base voltage is
approximately:
VB VCCR2/(R1+R2)
BJT as an amplifier
Class A Amplifiers
Class B Amplifiers
An example -- NOR
E-MOSFET
Channel is created by
gate voltage
Simplified
symbol
Biasing Circuits
FET Amplifiers
Principle of MOSFET
for E-MOS (n-channel)
(+)
Principle of MOSFET
for E-MOS (n-channel)
VTN The threshold voltage
Principle of MOSFET
for E-MOS (n-channel)
Principle of MOSFET
for D-MOS (n-channel)
Principle of MOSFET
for D-MOS (n-channel)
Voltage-current relations
p-cnannel MOS
(pMOS)
+
P+
+++++++
P+
body
n-substrate
An inverter
Voltage transfer
-- see the time delay
Complementary MOS
(CMOS)
Vss
output
input
Vdd
Vdd
pMOS
N
in
out
p-well
nMOS
n-substrate
Vss