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Consider the following examples:
Applying several theoretical
renormalization group methods for
obtaining of marginal dimension estimation,
in addition to the currently available one in
previous literature, yields accurate results
for a weakly diluted O (m) model, thus
providing a complete picture of its critical
behavior.
Moreover, the proposed method provides an
optimization procedure with simplified
calculations in ordered categorical data for
engineers.
PCIs can be used in uniform standards to
assess the performance of DT and OCT for
VLSI.
This method can be used to calculate how
thermodynamic functions depend on
microscopic parameters in the vicinity of
binary symmetrical mixture critical points,
thus clarifying how microscopic parameters
influence macroscopic critical behavior
This work extends the range of objects
where the RSOE is observed and
distinguishes between II-VI semiconductors
and other ones (Si, III-V semiconductors)
with respect to the RSOE mechanism.
Such an approach clarifies the EEE
mechanism for CsBr, thereby shedding
further light into the nature of the
exoelectrons formation.
Results in this study demonstrate that the
proposed model accurately describes systems
with more than two equilibrium positions on a
site, thereby extending conventional order-
disorder models to a wider class of materials.
Results in this study demonstrate that the
proposed method can enhance the world
competitiveness ranking of Taiwan.
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