Electronic Circuits

EE 359-Lecture 2

Prof. Uf Tureli
Dept. of ECE
Stevens Institute of Technology
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Course Outline
Syllabus

and announcements
http://koala.ece.stevens-tech.edu/~utureli/EE359
Review of Diodes

HW 5th Ed.: 2.100,3.18,3.19,3.26

Basic Semiconductors
Diode
Structure

Symbol

Diodes

Fig. 3.1 The ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c) equivalent
circuit in the reverse direction; (d) equivalent circuit in the forward direction.
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Diode Circuits

During positive cycle, diode

allow current to pass through
and output voltage is positive
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Diode Characterization
Diodes

have a nonlinear
response to voltage
We model different
regions of operation
Forward Bias

i I s e v / nVT 1

i I s e v / nVT 1

Reverse Bias
i I s
Breakdown

Fig. 3.7 The i-v characteristic of a silicon junction

diode.

Diode Regions
Diodes

have
negligible current
when biased in reverse
direction
Diodes have a 0.7V
drop in the forward
direction
Fig. 3.8 The diode i-v relationship
with some scales expanded and others
compressed in order to reveal details.
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Forward-Bias Region
Terminal

voltage v is positive

i I s (e v / nVT 1)

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VT

kT
q

k=Boltzmanns constant= 1.38 x10

T=absolute temparature in K=273+ Celcius
q=magnitude of electronic charge= 1.6 x10 19 C
i
1<n<2, depending on material, assume n=1 i I S e v / nVT v nVT ln
IS
EXAMPLE: Diode with n=1 displays forward voltage of 0.7V at 1mA. Find I S
SOLUTION: i I S e v / nV I S ie v / nV
I S 10 3 e 700 / 25 6.9 x10 16 A 10 15 A
For n=1:
I S 10 3 e 700 / 50 8.3 x10 10 A 10 9 A
For n=2:
T

Reverse-Bias Region
Terminal

voltage v is negative

i I s
v is negative and a few times larger than

VT

Current in the reverse direction is constant and equal to

and called saturation current. I S
Typically, real life diodes exhibit much larger reverse
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15
I

10

10
A
currents
S

Break Down Region

Knee

of diode I-v characteristic, the voltage

is less than Zener voltage.

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Physical Structure on PN
Junction
We can

simplify
Diode physics by
modeling it as a 2D
PN junction
PN junction:P and N
regions by different
dopings: n p ni
Diffusion & Drift

Fig. 3.10 Simplified physical

structure of the junction diode. (
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Reverse-Bias PN Junction
Fig. 3.13 The pn junction excited by a constant-current
source I in the reverse direction. To avoid breakdown, I is
kept smaller than Is. Note that the depletion layer widens and
the barrier voltage increases by Vr volts, which appears
between the terminals as a reverse voltage.

Reverse

Bias:
Drift current Is, indep.
of voltage,

IS ID I
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Depletion Capacitance
Charge

stored in the PN junction depends

on the voltage across junction.

Fig. 3.14 The charge stored on either side of the depletion layer as a function of the reverse voltage Vr.
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When the pn junction is

excited by a constantcurrent source
supplying a current I in
the forward direction:
The depletion layer
narrows and the barrier
voltage decreases by V
volts, which appears as
an external voltage in
the forward direction.

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Fig. 3.17 Minority-carrier distribution in a forward-biased pn junction. It is assumed that the p region is
more heavily doped than the n region; NA ND.
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Modeling

Approximate the
diode forward
characteristic with
two straight lines.

Fig. 3.20
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Simplified Piecewise Linear

Approximation
Diode

Is nonlinear

Fig. 3.21 Piecewise-linear model of the diode forward

characteristic and its equivalent circuit representation.
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Constant Voltage Drop Model

Development of the
constant-voltagedrop model of the
diode forward
characteristics.
A vertical straight
line (b) is used to
approximate the fastrising exponential

Fig. 3.23 Development of the constant-voltage-drop model of the diode forward characteristics. A vertical straight line (b) is used to
approximate the fast-rising exponential.

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Fig. 3.24 The constant-voltage-drop model of the diode

forward characteristic and its equivalent circuit
representation.
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Fig.3.25 Development of the diode small-signal model. Note

that the numerical values shown are for a diode with n = 2.

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Fig. 3.26 Equivalent circuit model for the diode for small
changes around bias point Q. The incremental resistance rd is
the inverse of the slope of the tangent at Q, and VD0 is the
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intercept of the tangent on the vD axis (see Fig. 3.25).

Fig. 3.27 The analysis of the circuit in (a), which contains

both dc and signal quantities, can be performed by replacing
the diode with the model of Fig. 3.26, as shown in (b). This
allows separating the dc analysis [the circuit in (c)] from the
signal analysis [the circuit in (d)].

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Fig. 3.30 Circuit

symbol for a zener
diode.

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Fig. 3.31 The diode i-v

characteristic with the
breakdown region shown in
some detail.
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Fig. 3.32 Model for the

zener diode.

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Fig. 3.36 Block diagram of a dc power supply.

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Fig. 3.37 (a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the diode
replaced with its battery-plus-resistance model. (c) transfer characteristic of the rectifier circuit.
(d) Input and output waveforms, assuming that rD R.
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Fig. 3.38 Full-wave rectifier utilizing a transformer with a center-tapped secondary winding. (a) Circuit.
(b) Transfer characteristic assuming a constant-voltage-drop model for the diodes. (c) Input and output
waveforms.
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Fig. 3.39 The bridge rectifier: (a) circuit and (b) input and output waveforms.
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Fig. 3.41 Voltage and current waveforms in the peak rectifier

circuit with CR T. The diode is assumed ideal.
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Fig. 3.46 A variety of basic limiting circuits.

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Fig. 4.1 A simplified structure of the npn transistor.

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