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p hole mobility
(cm2/Vs)
n electron mobility
(cm2/Vs)
vh
Electron current per unit area is Jn,drift = -q n
ve
In a semiconductor, both electrons and holes
conduct current:
J p ,drift qp p E
J n ,drift qn( n E )
1
The resistivity of a semiconductor
is
Unit: ohm-cm
Carrier Diffusion
Due to thermally induced random motion, mobile
particles tend to move from a region of high
concentration to a region of low concentration.
Analogy: ink droplet in water
Current flow due to mobile charge diffusion is
proportional to the carrier concentration gradient.
dp/dx & dn/dx
The proportionality constant is the diffusion
dp
constant.
J p qD p
dx
Jn = qDn dn/dx
Notation:
Dp hole diffusion constant
(cm2/s)
Dn electron diffusion constant
Diffusion Current:
Diffusion current within a
semiconductor consists of hole and
electron components:
dp
dn
J p ,diff qD p
J n ,diff qDn
dx
dx
dn
dp
J tot ,diff q ( Dn
Dp )
dx
dx
The total current flowing in a
semiconductor is the sum of drift
current and diffusion current:
+
are in contact, a PN junction diode
is
formed.
I
D
Hole gradient
ECE 663
Depletion Region
As conduction electrons and holes diffuse across the
junction, they leave behind immobile ionized
dopants. Thus, a region that is depleted of mobile
carriers is formed which is called depletion region.
The fixed ions produce electric field which is
directed from donor ions(n-region) to acceptor ions
(p-region). This field acts as barrier for the flow of
majority carriers. The process is self arresting.
Potential difference developed is called potential
barrier (Vo).
quasiquasineutr
neutr
width=Wdepal
al
regio
regio
n
n
Jdrift =
Jn,drift + Jp,drift
ECE 663
PN Junction in Equilibrium
In equilibrium, the drift and diffusion
components of current are balanced;
therefore the net current flowing across
the junction is zero.
J p ,drift J p ,diff
J n ,drift J n ,diff
Time < 0
P-type piece
ECE 663
N-type piece
ECE 663
Depletion
Region
E
ECE 663
In N region:
Fermi level represents average energy of electrons moves
downwards.
Fermi energy must be constant at equilibrium and is fixed
relative to band structure. Its movement causes downward
shift of entire band structure.
In P region:
Fermi level represents average energy of holes moves
upwards. Its movement causes upward shift of entire band
structure.
This process continues till EFn and EFp attain the same level.
The displacement of energy bands on both sides causes
bending of energy bands at the junction.
This results in potential barrier Vo or energy hill eVo.
ECE 663
C.B
=eV0
C.B
V.B
=eV0
V.B
nn =Nc
exp-((Eg-EF )/KT)
The edge of the conduction band on p-side is (Eg+eVo).
The hole concentration
np= Nc
exp-((Eg+eVo)-EF )/KT
Dividing 1 by 2 ,
we get
n n / np =
exp((eVo)/KT)
N acceptor
level
on the p
A
side
nn =ND
ECE 663
and
pp= NA
also ,
np pp = (ni) 2
2
eV
o
P-n junction
under
Reverse
bias:
Band
structure