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ENGINEERING AURANGABAD
Optical Fiber Communication
Assignment on
Receiver structures
Presented By:
BE11F04F007 Sumedh Arak.
BE11F04F008 Priyanka Bagad.
BE11F04F009 Shraddha Bajaj
BE11F04F010 Shubham Bharajkar
Guided By:
Prof. A. S. Bhalchandra.
Receiver structures
Optical detector is represented as a current source idet
The noise sources (it, iTS and iamp)
Amplifier
Equalizer as a frequency shaping filter and may also apply selective phase
Amplifier
Cd
RL
it
iTS
Ra
Equalizer
Ca
iamp
Vout
AMP
Types of configurations
There are three types of digital optical fiber receiver
structures:
1.
2.
3.
Low impedance
front end
Low impedance front end allows thermal noise to dominate within the
receiver which limits its sensitivity
hf
Ra
Rb
AMP
Voltage amplifier
hf
Ra
Equalizer
Rb
AMP
Voltage amlifier
it
Rt
idet
Va
RTL
-G
Vin
Ct
ia
Vout
Example
A high i/p impedance amplifier which is employed in an optical fiber receiver has
capacitance Ct is 6 pF.
b) The mean square thermal noise current per unit BW generated by this high input-
Solution:
FET preamplifiers
The lowest noise amplifier device which is widely available is the silicon FET.
Unlike the bipolar transistor, the FET operates by controlling the current flow with
an electric field produced by an applied voltage on the gate of the device (see
Figure 9.12) rather than with a base current.
Thus the gate draws virtually no current, except for leakage, giving the device an
ideal choice for the front end of the optical fiber receiver amplifier. However, the
superior properties of the FET over the bipolar transistor are limited by its
comparatively low transconductance ( gm).
Fig.Grounded source FET configuration for the front end of an optical fiber
receiver amplifier
It can be shown that a figure of merit with regard to the noise performance of
especially the case for silicon FETs at frequencies above 25 MHz where the
current gain drops to values near unity as the transconductance is fixed with a
decreasing input impedance.
Therefore at frequencies above 25 MHz, the bipolar transistor is a more useful
amplifying device.
A large bias resistor has the effect of reducing the thermal noise but it will
also increase the low-frequency impedance of the detector load which tends
to integrate the signal (i.e. high-impedance integrating front-end).
Thus compensation through equalization at a later stage is generally
required.
barrier devices are called GaAs metal Schottky field effect transistors
(MESFETs).
They overcome the major disadvantage of silicon FETs in that they will
operate with both low noise and high gain at microwave frequencies (GHz).
Thus in optical fiber communication receiver design they present an
The pulse shaping and noise filtering circuits comprise two passive filter
sections to ensure that the pulse waveform shape is optimized and the noise is
minimized.
Equalization for the integration (i.e. differentiation) is performed by
monitoring the change in the integrated waveform over one period with a
subminiature coaxial delay line followed by a high-speed, low-level
comparator.
The receiver is designed for use at a transmission rate of 140 Mbit s1 where
The receiver is designed for use at a transmission rate of 140 Mbit s 1 where its
InGaAs hybrid PINFET receiver and an InAlAs APD receiver when both are
operating at a wavelength of 1.55 m. The hybrid PINFET receiver design
displays a lower sensitivity than the APD receiver at a transmission rate of 2.5
Gbit s1 and although it can also function at the higher transmission rate of 40
Gbit s1, the PINFET receiver then exhibits a very poor sensitivity of only
7.0 dBm.
Receiver type
Sensitivity (dBm)
Transmission rate
(Gbit s1)
PINFET
-23.0
2.5
APD
-34.0
2.5
APD
-29.0
10
APD
-27.1
10
PINFET
7.0
40
Sensitivities for InGaAs PINFET and InAlAs APD receivers at the wavelength of 1.55 m
High-performance receivers
It is clear from the discussions in previous Sections that noise performance is
Si bipolar device.
Below 10 Mbit s1 the Si MOSFET preamplifier provides a lower noise
Above 20 Mbit s1, however, the highest sensitivity is obtained with the
GaAs MESFET device, even though at very high speeds the Si MOSFET
and Si bipolar transistor preamplifiers exhibit good noise performance
slightly worse than that of GaAs MESFET.
Si bipolar transistor preamplifier displays a noise improvement over the Si
the silicon metal oxide semiconductor FET (MOSFET) and the silicon
bipolar transistor preamplifier with a GaAs MESFET device for
transmission rates from 1 Mbit s1 to 10 Gbit s1 shown in fig.
designs, high speed APD optical receivers have also been invented.
Following fig. shows diagram of Circuit configuration for a high-sensitivity
APDFET optical receiver.
In particular, a high-sensitivity APDFET receiver designed to operate at
provides a measure of the difference between the device sensitivity and its
saturation or overload level.
The difference between the two latter receiver structures may be observed in
(left hand side) to the transimpedance configuration (right hand side) as the
value of the feedback resistor Rf is reduced.
The saturation level increases at a faster rate, producing a significantly wider
As the d.c. voltage at the input to the amplifier increases with the
incident optical power, the control loop applies an equal but opposite
shift in the voltage to the other side of the bias resistor.
In this way the voltage at the input to the preamplifier becomes
to improve the saturation level, the overall dynamic range tends to be poor.
For such a receiver operating at a speed of 1 Gbit s1 it is usually in the range
20 to 27 dB.
The dynamic range can be 30 to 39 dB.* Furthermore, in the latter case
Figure, eliminates the thermal noise associated with the feedback resistor in
the transimpedance frontend design.
This strategy proves most useful at low transmission rates because in this case
the feedback resistors employed are normally far smaller than the optimum
value for low-noise performance so as to maintain the resistor at a practical
size (e.g. 1 M).
Alternative method
Employ pre-amplification using an optical amplifier prior to the Receiver.
filter is employed to reduce the intensity of the spontaneous emission reaching the optical
detector.
Thus the effect of reducing the spontaneous noise products and thus improving the overall
receiver sensitivity.
The SOA preamplifier pin photodiode Configuration displays a significant improvement
that both the SOA and erbium-doped fiber amplifier (EDFA) are useful devices to provide
for the optical pre-amplification.
(Contd)
with a noise figure value lying between 4 and 5 dB while enabling a high
transmission rate of 40 Gbit /s .
The SOA, however, exhibits a relatively high noise figure in the range 7 to 8
dB, but its small size, wider operating wavelength range and potential for
monolithic integration make it an important device for optical preamplification.
(Contd)
What is an EDFA?
insulator(Ge-on-SOI) photodiodes
receiver are recently used.
Error-free (BER<10-12) operation of
Photodetector
(GaAs ,etc)
TIA(SiGe ,Bi
CMOS)
CDR ,digital
Photodetector
(GaAs ,etc)
TIA
(SiGe ,Bi
CMOS)
(b)CMOS receiver
CDR,digital
Photodiode
Input Bias
Transimpedance
Amplifier
Voltage
Gain Stage
Output
Buffer
Post
Amplifier
Output
Automated
Gain Control
CMOS receivers
There has been significant recent progress towards the realization of multi-
CMOS receivers
The topology used is the transimpedance (TIA) amplifier, whose relative
low input impedance and wide bandwidth is well suited for the application.
In the design of fixed-gain trans-impedance feedback amplifiers, there is a
direct relation between input noise current and the input current overload
level.
Therefore, in order to enlarge the dynamic range, various means have been
instability.
(Contd)
CMOS receivers
2.
3.
Closed loop TIA are more preferable over the open loop ones, because the
feedback resistor can be increased independently to the supply voltage since no
bias current flows through it.
4.
Thank you!!!