Diode

arsenic, antimony and phosphorus

are donor dopants
if phosphorus is introduced into

the silicon lattice, there is an

extra electron free to move
around and contribute to electric
current
very loosely bound to atom and can
easily jump to conduction band

produces n type silicon

sometimes use + symbol to indicate
heavier doping, so n+ silicon

phosphorus becomes positive ion

after giving up electron

Boron, aluminum, and

gallium has 3 electrons in
its outer shell, so it
contributes a hole if it
displaces a silicon atom
boron is an acceptor
dopant
yields p type silicon
boron becomes negative
ion after accepting an
electron

The PN Junction

The PN Junction

The Biased PN Junction

Forward Bias: Vapplied > 0

In

forward bias the depletion region shrinks

slightly in width. With this shrinking the
energy required for charge carriers to cross
the depletion region decreases exponentially.
Therefore, as the applied voltage increases,
current starts to flow across the junction.
The barrier potential of the diode is the
voltage at which appreciable current starts to
flow through the diode.
The barrier potential varies for different
materials.

Reverse Bias: Vapplied < 0

Under

reverse bias the depletion region

widens. This causes the electric field
produced by the ions to cancel out the applied
reverse bias voltage.
A small leakage current, Is (saturation current)
flows under reverse bias conditions. This
saturation current is made up of electron-hole
pairs being produced in the depletion region.
Saturation current is sometimes referred to as
scale current because of its relationship to
junction temperature.

Current-Voltage
Characteristics

Current-Voltage
Characteristics

Karakteristik terminal dari dioda

Kurva karakteristik terbagi dalam tiga daerah:
1. daerah forward-bias, ditentukan oleh v > 0
2. daerah reverse-bias, ditentukan oleh v < 0
3. daerah breakdown, ditentukan oleh v < -VZK

Contoh Soal
Hitung

arus yang
mengalir pada diode
(Si) dengan asumsi :
Diode Ideal
Vb diode 0.7
Vb diode 0.7 dan Rb 1

Ohm

Rectifier Diode

Diode Testing Procedure

FORWARD AnD REvERSE BiAS TESTinG