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Inductors
Basic Structure
Inductance Equations
Parasitic Capacitance
Loss Mechanisms
Inductor Modeling
Inductor Structures
Symmetric Inductors
Effect of Ground Shield
Stacked Spirals
Transformers
Structures
Effect of Coupling
Capacitance
Transformer Modeling
Varactors
PN Junctions
MOS Varactors
Varactor Modeling
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Circular
Octagonal
Symmetric
Parallel Spirals
Stacked
With Grounded shield
Various inductor geometries shown above are result of improving
the trade-offs in inductor design, specifically those between:
The quality factor and the capacitance.
The inductance and the dimensions.
Note These various inductor geometries provide additional
degrees of freedom but also complicate the modeling task.
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Inductance Equations
Closed form inductance equations can be found based on
1) Curve fitting methods
2) Physical properties of inductors
Various expressions have been reported in literature [1,2,3].
interwinding capacitances
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If k-->infinity and Cu-->0 such that kCu is equal to total wire capacitance:
Capacitance = Ctot /3
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Skin depth =
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resistance =
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Q = L1 /Rs
Q = Rp /L1
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Resulting behavior of Q
Overall Q of inductor
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Broadband model
Broadband skin effect model
At low frequencies current is uniformly distributed thorough
the conductor and model reduces to R1||R2||.....||Rn [9]
As frequency increases the current moves away from the
center of the conductor, as modeled by rising impedance of
inductors in each branch.
In [9], a constant ratio of Rj/Rj+1 is maintained to simplify the
model. ( Lj and Rj represents the impedance of cylinder j of
conductor shown above)
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Definitions of Q
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Symmetric Inductor
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Leq= L1 + L2 + 2M
Lower Q
Higher Q
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Stacked Inductors
Ltot = L1 + L2 + 2M
M = L 1 = L2
Ltot = 4L
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Transformers
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Transformer Structures
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Input Impedance =
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Stacked Transformers
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Transformer Modeling
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T-Line as Inductor
T-Line serving as
load inductor
T-Line having short circuit termination act as an inductor (if Tline is much smaller than the wavelength of signal).
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Varactors
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PN Junction Varactor
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Q of varactor is obtained by
measurement on fabricated
structure
Difficult to calculate it
Current distribution in varactor
As shown above, due to the two dimensional flow of
current it is difficult to compute the equivalent series
resistance of the structure.
N-well sheet resistance can not be directly applied to
calculation of varactor series resistance.
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MOS Varactor ?
Regular MOS device:
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Accumulation-mode MOS
varactor is obtained by
placing an NMOS inside an
nwell .
The
variation
of
capacitance with Vgs is
monotonic.
The C/V characteristics
scale well with scaling in
technology.
Unlike PN junction varactor
this structure can operate
with positive and negative
bias so as to provide
maximum tuning range.
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Vg < Vs
Depletion region is formed
under gate oxide.
Equivalent capacitance is
the series combination of
gate
capacitance
and
depletion capacitance.
Vg > Vs
Formation of channel
under gate oxide.
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Here, Vo and a allow fitting for the slope and the intercept.
The above varactor model translates to different characteristics in
different circuit simulators.
Simulation tools (HSPICE) that analyze circuits in terms of voltages
and currents interpret the above non-linear capacitance equation
correctly.
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Q of varactor:
Determined by the resistance between source and drain
terminals.
Approximately calculated by lumped model shown in above.
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Distributed Model
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Constant Capacitors
RF circuits employ constant capacitors for
purposes:
To adjust the resonance frequency of LC tanks.
To provide coupling between stages.
To bypass the supply rail to ground.
various
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MOS capacitor
coupling device.
used
as
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Fringe Capacitor
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References
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References
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References
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