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QUIZZ 22 SEPTEMBER 2011

[Bab4,hal.97]
1. TerangkandengankalimatAndasendiriparagrafdiatas!
2. Dislokasiitutermasukstrukturmikroataumakro?
3. Berapakirakiraukurandislokasi?
4. Alatapaygbisadipakaiuntukmelihatdislokasi?
[untukmenjawabsoalno3dan4,lihatgambar4.15,Bab4,hal,102]
Chapter 4-
QUIZZ
1. Apakahyangdimaksudsistemslip?Ilustrasikan
contohnyapadastrukturFCC!

2. Sebutkanjenisjeniscacatkristal!

3. Apakahcacatcacattersebutmerugikan?

4. Terangkandefinisiberikut:
Larutanpadat(solidsolution)vsfasakedua(second
phase)
Solutevssolvent
Komposisi(composition)
Unsuratomelemen(element)vssenyawa(compound)
Chapter 4-
Paduan(alloys)vskomposit(composites)
CHAPTER 4:
IMPERFECTIONS IN SOLIDS

ISSUES TO ADDRESS...
What types of defects arise in solids?

Can the number and type of defects be varied


and controlled?

How do defects affect material properties?

Are defects undesirable?

Chapter 4-1
TYPES OF IMPERFECTIONS

Vacancy atoms
Interstitial atoms Point defects
Substitutional atoms

Dislocations Line defects

Grain Boundaries Area defects

Chapter 4-2
POINT DEFECTS
Vacancies:
-vacant atomic sites in a structure.

Vacancy
distortion
of planes

Self-Interstitials:
-"extra" atoms positioned between atomic sites.

self-
distortion interstitial
of planes

Chapter 4-3
Chapter 4-
EQUIL. CONCENTRATION:
POINT DEFECTS
Equilibrium concentration varies with temperature!

No. of defects Activation energy

ND Q
exp D
N kT
No. of potential Temperature
defect sites. Boltzmann's constant
(1.38 x 10-23 J/atom K)
(8.62 x 10-5 eV/atom K)
Each lattice site
is a potential
vacancy site
Chapter 4-4
MEASURING ACTIVATION ENERGY

We can get Q from ND Q


exp D
an experiment. N kT
Measure this... Replot it...

ND ND slope
1
ln
N N
-QD/k
exponential
dependence!

T 1/T
defect concentration
Chapter 4-5
ESTIMATING VACANCY CONC.
3
Find the equil. # of vacancies in 1m of Cu at
1000C.
Given:
/cm3
= 8.4 g ACu = 63.5g/mol
QV = 0.9eV/atom NA = 6.02 x 10 23 atoms/mole
0.9eV/atom
ND Q
exp D -4
= 2.7 10
N kT
1273K
8.62 x 10-5 eV/atom-K
NA
For 1m3, N = x x 1m3 = 8.0 x 1028 sites
ACu
Answer:
ND =2.7 10-4 8.0 x 10
28 sites =2.2x 1025 vacancies

Chapter 4-6
OBSERVING EQUIL. VACANCY CONC.
Low energy electron
microscope view of
a (110) surface of
NiAl.
Increasing T causes
surface island of
atoms to grow.
Why? The equil.
vacancy
conc. increases via Reprinted with permission from Nature (K.F.
McCarty, J.A. Nobel, and N.C. Bartelt, "Vacancies
atom in
Solids and the Stability of Surface Morphology",
motion
Island from the
grows/shrinks to maintain Nature, Vol. 412, pp. 622-625 (2001). Image is
equil. vancancy conc. in the bulk.
crystal 5.75 m by 5.75 m.) Copyright (2001)
Macmillan Publishers, Ltd.
to the surface, where
they join the island.
Chapter 4-7
POINT DEFECTS IN ALLOYS
Two outcomes if impurity (B) added to host (A):
Solid solution of B in A (i.e., random dist. of point
defects)

OR

Substitutional alloy Interstitial


(e.g., Cu in Ni) alloy
(e.g., C in Fe)
Solid solution of B in A plus particles of a new
phase (usually for a larger amount of B)
Second phase particle
--different composition
--often different structure.

Chapter 4-8
ALLOYING A SURFACE
Low energy electron
microscope view of
a (111) surface of Cu.
Sn islands move
along
the surface and
"alloy"
the Cu with Sn
atoms,
to make "bronze".
Reprinted with permission from: A.K. Schmid,
The islands N.C. Bartelt, and R.Q. Hwang, "Alloying at
Surfaces by the Migration of Reactive Two-
continually Dimensional Islands", Science, Vol. 290, No.
5496, pp. 1561-64 (2000). Field of view is
move into 1.5 m and the temperature is 290K.

"unalloyed"
regions and leave Chapter 4-9
COMPOSITION
Definition: Amount of impurity (B) and host (A)
in the system.
Two descriptions:
Weight % Atom %
mass of Bx 100 # atomsof Bx 100
CB = C'B =
total mass total # atoms
Conversion between wt % and at% in an A-B alloy:
C'BAB C B/AB
CB = x 100 C'B =
C'AAA +C'BAB C A/AA +C B/AB
Basis for conversion: atomic weight of B
mass of B =moles of B x AB atomic weight of A
mass of A =moles of A x AA
Chapter 4-10
LINE DEFECTS
Dislocations:
are line defects,
cause slip between crystal plane when they move,
produce permanent (plastic) deformation.

Schematic of a Zinc (HCP):


before deformation after tensile elongation

slip steps

Chapter 4-11
DISLOCATION

Chapter 4-
SCREWDISCLOCATION

Chapter 4-
Chapter 4-
DISLOCATIONS & CRYSTAL STRUCTURE
Structure: close- view onto two
packed close-packed
planes.
planes & directions
are preferred. close-packed directions
close-packed plane (bottom)close-packed plane (top)

Comparison among crystal structures:


FCC: many close-packed planes/directions;
HCP: only one plane, 3 directions;
BCC: none

Results of tensile Mg (HCP)


testing.
tensile direction
Al (FCC)
Chapter 4-14
AREA DEFECTS: GRAIN BOUNDARIES
Grain boundaries:
are boundaries between crystals.
are produced by the solidification process, for
example.
have a change in crystal orientation
Metalacross
Ingotthem.
impede dislocation motion.
Schematic ~ 8cm

grain
boundaries

heat
flow Adapted from Fig. 4.10, Callister
Adapted from Fig. 4.7, Callister 6e. 6e. (Fig. 4.10 is from Metals Handbook, Vol. 9, 9th
edition, Metallography and Microstructures, Am.
Society for Metals, Metals Park, OH, 1985.)
Chapter 4-15
OPTICAL MICROSCOPY (1)
Useful up to 2000X magnification.
Polishing removes surface features (e.g.,
scratches)
Etching changes reflectance, depending on
crystal microscope
orientation.

close-packed planes
Adapted from Fig. 4.11(b) and (c),
Callister 6e. (Fig. 4.11(c) is courtesy
of J.E. Burke, General Electric Co.

micrograph of
Brass (Cu and Zn)

0.75mm
Chapter 4-16
OPTICAL MICROSCOPY (2)
Grain boundaries...
are imperfections,
are more susceptible microscope
to etching,
may be revealed as polished surface
dark lines, surface groove
change direction in a grain boundary
polycrystal.
Adapted from Fig. 4.12(a)
ASTM grain and (b), Callister 6e.
size number (Fig. 4.12(b) is courtesy
of L.C. Smith and C.
Brady, the National
N = 2n-1 Bureau of Standards,
Washington, DC [now the
National Institute of
no. grains/in2 Standards and

at 100x Fe-Cr alloy Technology,


Gaithersburg, MD].)
magnification
Chapter 4-17
Chapter 4-
Chapter 4-
SUMMARY
Point, Line, and Area defects arise in solids.

The number and type of defects can be varied


and controlled (e.g., T controls vacancy conc.)

Defects affect material properties (e.g., grain


boundaries control crystal slip).
Defects may be desirable or undesirable
(e.g., dislocations may be good or bad, depending
on whether plastic deformation is desirable or not.)

Chapter 4-18

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