The document summarizes the voltage-current characteristics of an n-channel MOSFET. It describes how the channel current is caused by electrons traveling from source to drain under the influence of an electric field. The channel current density is assumed to be uniform across incremental segments of the channel. Integrating the voltage drop across segments using the boundary conditions yields an expression for drain current that depends on gate voltage, drain voltage, and device parameters like mobility and oxide capacitance. The drain current is zero when gate voltage is below threshold and follows a quadratic relationship with drain voltage when above threshold.
The document summarizes the voltage-current characteristics of an n-channel MOSFET. It describes how the channel current is caused by electrons traveling from source to drain under the influence of an electric field. The channel current density is assumed to be uniform across incremental segments of the channel. Integrating the voltage drop across segments using the boundary conditions yields an expression for drain current that depends on gate voltage, drain voltage, and device parameters like mobility and oxide capacitance. The drain current is zero when gate voltage is below threshold and follows a quadratic relationship with drain voltage when above threshold.
The document summarizes the voltage-current characteristics of an n-channel MOSFET. It describes how the channel current is caused by electrons traveling from source to drain under the influence of an electric field. The channel current density is assumed to be uniform across incremental segments of the channel. Integrating the voltage drop across segments using the boundary conditions yields an expression for drain current that depends on gate voltage, drain voltage, and device parameters like mobility and oxide capacitance. The drain current is zero when gate voltage is below threshold and follows a quadratic relationship with drain voltage when above threshold.
Consider the cross-sectional We assume the threshold
view of an n-channel MOSFET voltage is constant along the operating in linear mode channel. (picture below) The channel voltage Vc has VGS > VT0 VDS boundary conditions: VS =0 + - Vc at x=0=VS=0 and Vc at x=L=VDS n+ Channel n+ The channel is inverted from Source Drain the source end to the drain end. y x=0 x x=L Other voltages of interest are: p-type substrate Depletion Region VGSVT0 and VB =0 VGD=VGS-VDSVT0 MOSFET Voltage Characteristics The channel current (drain QI(x)=-Cox[VGS-Vc(x)-VT0] current ID) is caused by The thickness of the inversion electrons in the channel region layer tapers along the channel traveling from source to drain from the source towards the under the influence of the drain because the influence of lateral electric field. Vgate-tochannel decreases from If the total mobile electron source to drain. charge in the surface inversion If we consider a small layer is assigned the vaiable incremental resistance dR for a QI(x), we can thus express this differential segment of the charge as a function of the gate- channel assuming constant to-source voltage VGS and the electron mobility mn at the channel voltage Vc(x) surface we have: dR dx Wm n QI ( x ) MOSFET Voltage Current Characteristic
The variable W represents the Applying Ohms law for this
channel width. segment yields the voltage drop The electron surface mobility along the incremental segment mn depends on the doping dx: dV I dR I dx D
Wm n QI ( x ) c D
concentration of the channel
region. The above equation can now be We further assume that the integrated along the channel channel current density is from x=0 to x=L using the uniform across the segment boundary conditions for Vc where we are measuring the We get: incremental resistance. VGS Vc VT 0 dVc VDS ID flows between the source and I D L Wm n Cox 0 drain. MOSFET Voltage Current Characteristics
Assuming that the channel The drain current ID also
voltage Vc is the only variable depends on the devices channel that depends on position x, the length and width. drain current is determined to be: mC W
I D n ox 2VGS VT 0 VDS VDS2 2 L This equation shows the dependence of the drain current on the process parameters such as oxide capacitance, carrier mobility, and bulk to source voltage. MOSFET Voltage Current Characteristics The equations: I 0 when V gs Vt ds 2
V I V gs Vt V ds for ds ds 2
0 V V gs Vt equvalentl y VGS VT 0 ; VGD VGS V DS VT 0 ds
I
V gs Vt 2
for 0 V gs Vt V ds 2 ds represent a simple view of the MOS transistor DC Voltage current equations. There are models that better calculate the MOS transistors operation with accuracy.