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(BJT)
CHAPTER 3
Introduction
The basic of electronic system nowadays is
semiconductor device.
The famous and commonly use of this device
is BJTs
(Bipolar Junction Transistors).
It can be use as amplifier and logic switches.
BJT consists of three terminal:
collector : C
base : B
emitter : E
Two types of BJT : pnp and npn
Transistor Construction
IC
IE
Step 1:
Temperature increase : 780C 250C = 530C
Step 2:
Derate transistor : 0.66mW/0C x 530C = 35 mW
Step 3:
Maximum power dissipation at 780C = 115W 35W=80
mW.
Step 4:
ICmax = PCmax / VCE=80m/10 = 8 mA (point C)
ICmax = PCmax / VCE=80m/20 = 4 mA. (point B)
ICmax = PCmax / VCE=80m/40 = 2 mA (point A)
Step 5:
Draw the new line of power dissipation at 780C .
Transistor Specification Sheet
Transistor Terminal Identification
Transistor Testing
1. Curve Tracer
Provides a graph of the characteristic curves.
2. DMM
Some DMMs will measure DC or HFE.
3. Ohmmeter