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Fabrication Process Of
Integrated Circuits
Group Members
M.Hamza Fayyaz(Sp15-Bee-111)
When?
VLSI Technology Began in 1970s
When Semiconductors and telecommunication technologies been developed
Microprocessor is also a part of VLSI Technology.
SOFTWARE USED IN VLSI DESIGN
VERILOG SOFTWARE
Verilog is hardware descriptive language which are basically used to
describe a Digital system.
Verilog basically define a Top-Down Design or Bottom-Up Design
Approach.
Top-Down VLSI Design Techniques
Here We Explain Fabrication Process
P-Substrate Formation N-well Formation
+ Photo Lithography
+Photo-Resist
Oxidation
Formation of N-
Diffusion Stripping off protective
Etching
layer
P-Diffusion Same As
Metallization Contacts Formation N-Diffusion
Types Of Fabrication:
P-Substrate Formation
P-Substrate
This Oxidation layer is basically used for insulation and also for the Gates.
Dry Oxide
Si + O2 SiO2
Wet oxide
P-Substrate
Step N0 : 02
Photo Resistor
Photo Resistor
SiO2
P-substrate
Masking
3
N-Mask is opaque and transparent
regions.
N-Mask
These Plates are placed on different on
Wafer and place very precisely
Negative photo resist ,this area is hardened and
U-V Rays N-Mask exposed to UV rays.
Positive Photo resist layer become soften
and removed by acidic or basic solution
---------------------
Photo Resistor Photo Resistor
SiO2 SiO2
P-substrate P-substrate
ETCHING Step No:
04
Wafer is immersed in acidic and basic solution and clean the exposed layer of photo
resistor
Depends on the material used to be etched out
Example like in Silicon or Poly silicon we use Hydro fluoric Acid
Nitride we use phosphoric Acid
SiO2 SiO2
After
HCl
Bath
P-substrate P-substrate
Removal Of Protective Layer
Step No : 05
Removes through Chemical Reaction
Like we use fuming Nitric acid or exposure to Oxides
Photo Resistor
SiO2 SiO2
Nitric
Acid
Or
Oxides
P-substrate P-substrate
N-Well Diffusion Step No : 06
SiO2
N-Well
N-Well P-substrate
P-substrate
Poly Silicon Layers
C h e m i c a l Va p o r D e p o s i ti o n
Thin Gate Oxide:
Poly silicon layer is generally formed by silane at Conducting layer that
about 1000C connect the underlying
Then silicon is reacted with the oxygen at source or drain.
Dielectric layer that
700C to give Aluminum and nitride and also
silicon dioxide deposited on the Wafer. separate gate terminal
This Layer is generally thick oxides layer from source or drain.
Layer is normally
Aluminum is then vaporized to
compose of Aluminum or
deposited on the wafer
dry oxides.
Poly silicon
N- N-
Well Well
P-substrate After Etching P-substrate
Self Alignment
Poly silicon gives precise alignment for the source and Drain
Now, protective layer of Oxide is form
Use Masking process to make small gaps for n+ doping
N- N-
Well Align for Well
P-substrate P-substrate
Doping
Ion Implantation
Low temperature Process
Examples
Advantages:
-------------------------------
n+ Diffusion
N-well
P-Substrate
n+ Diffused On Wafer
n+ Diffusion
n+ n+ n+
N-well
P-Substrate
n+ n+ n+
N-well
P-Substrate
P-Diffusion
-------------------------------
P-Diffusion
n+ n+ n+
N-well
P-Substrate
ION IMPLANTATION
p
p+ n+ n+ p+ n+
+
N-well
P-Substrate
Contacts
Firstly ,thick layer of Oxide is pressed on the wafer
This is a protective layer which protect other parts from environment .
Cut the part where we connects terminal.
Cut through the etching and same as above process
------------------------------
Contacts Thick Oxide Layer
p
p+ n+ n+ p+ n+
+
N-well
P-Substrate
METALLIZATION Through patterning and masking we get rid
of excess metal
------------------------------------
Metals
Splutter metal on the surface of wafer
p
p+ n+ n+ p+ n+
+
N-well
P-Substrate
END RESULT OF FABRICATION
N-MOS P-MOS
p
p+ n+ n+ p+ n+
+
N-well
P-Substrate
REFFERENCE:
Lecture slides .
Cheming Hu Ch3
Thank you