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1 Il Il
= = =
VA d 2
V
2
(0.1 A)(38 10 3 m) -1
= = 14.9 ( - m)
5.1 10 3 m 2
(12.5 V)()
2
l l l 51 10 3 m
R= = = 2
= 168
A A 2 5.1 10 3 m
d
2
14.9 ( m)1 ()
2
18.10 (a) Calculate the drift velocity of electrons in germanium at room temperature and
when the magnitude of the electric field is 1000 V/m. (b) Under these circumstances,
how long does it take an electron to traverse a 25-mm length of crystal?
(mobility of electrons in Ge is 0.38 m2/v-s)
l 25 103 m
t = = = 6.6 10 -5 s
vd 380 m/s
18.11 At room temperature the electrical conductivity and the electron mobility
for copper are 6.0 107 (ohm-m)-1 and 0.0030 m2/V-s, respectively. (a) Compute the
number of free electrons per cubic meter for copper at room temperature. (b) What is the
number of free electrons per copper atom? Assume a density of 8.9 g/cm3.
6.0 10 7 ( m)1 = 1.25 1029 m-3
n= =
e e (1.602 1019 C)(0.003 m2 /V- s)
(b) In order to calculate the number of free electrons per copper atom, we must first
determine the number of copper atoms per cubic meter, NCu. From Equation 4.2
using the atomic weight value for Cu found inside the front cover—viz. 63.55
(and
g/mol)
And, finally, the number of n 1.25 10 29 m3
free electrons per aluminum = 28 3
= 1.48
atom is just n/NCu N Cul 8.43 10 m
Intrinsic Semiconduction
18.18 (a) Using the data presented in Figure 18.16, determine the number of free
electrons per atom for intrinsic germanium and silicon at room temperature (298 K). The
densities for Ge and Si are 5.32 and 2.33 g/cm3, respectively.
(b) Now explain the difference in these free-electron-per-atom values.
table_18_03
Extrinsic Semiconduction
*18.21 At room temperature the electrical conductivity of PbTe
(Lead telluride) is 500 (Ω-m)–1, whereas the electron and
hole mobilities are 0.16 and 0.075 m2/V-s, respectively.
Compute the intrinsic carrier concentration for PbTe at room
temperature.
= n| e |e
The Temperature Dependence of Carrier Concentration
E gap / kT
ni e