Eugene H.

Embalzado Jr, ECE

All our DREAMS can come true,
if we have the COURAGE to
PURSUE them.

-Walt Disney
 Unipolar device
 Field effect is related to the depletion region
produce through the application of the its
terminals (gate)
 Voltage Controlled Device
 Very High Input Resistance
 Preferred in low-voltage switching
applications
 FET has extremely high input impedance
(generally 100Mohms) than BJT which is
(2kohms)
 FET is relatively immune to radiation, but BJT is
sensitive
 FET is less noisy than BJT
 FET can be operated to provide greater thermal
stability than BJT
 FET is smaller than BJT
 FET has smaller gain bandwidth analysis
 FET has grater susceptibility to damage in
handling
 FET is for low power amplification
 p-channel
JFET n-channel

 Types of FET enhancement

p-channel
depletion
MOSFET enhancement
n-channel
depletion
 Sometimes known as a JUGFET
 Here we will use another common name – the
JFET
 Herethe insulated gate of a MOSFET is
replaced with a reverse-biased pn junction
 Sincethe gate junction is always reverse-
biased no current flows into the gate and it
acts as if it were insulated
 Pinch-off Voltage
 For VGS = 0 V, the value of VDS at which ID
becomes essentially constant
 IDSS (Drain to Source current with gate
Shorted)
 a continued increase in VDS above the pinch-
off voltage produces an almost constant
drain current
 Cutoff Voltage
 The value of VGS that makes ID approximately
zero
 Cutoff Voltage vs Pinchoff Voltage
 Alsocalled
Transconductance
Curve
 Shockley’s
Equation
 Thepurpose of biasing is to select the proper
dc gate-to-source voltage to establish a
desired value of drain current and, thus, a
proper Q-point.
 Most common type of bias in JFET

VDS = VD – Vs
Vs = IDRs
VD = IDRD
 Itis usually desirable to bias a JFET near the
midpoint of its transfer characteristic curve
where ID = IDSS/2.
 Thevoltage at the source of
the JFET must be more
positive than the voltage at
the gate in order to keep the
gate-source junction reverse-
biased.
 Simplified FET Equivalent Circuit
A common-source JFET amplifier is one in
which the ac input signal is applied to the
gate and the ac output signal is taken from
the drain.
A common-drain JFET amplifier is one in
which the input signal is applied to the gate
and the output is taken from the source,
making the drain common to both.
A self-biased common-gate amplifier is
where the gate is connected directly to
ground.
 Where:
 RDS(on) is the resistance when VDS is small and
VGS = 0
 Shunt Switch

 Series Switch
 Chopper
 A device or circuit that interrupts a direct
current (dc) at some predetermined rate. Ideally,
such a device is characterized by distinct on and
off operation.
 Buffer Amplifier
 Isolates preceding stage from the following stage
 Due to High Input Z and Low output Z
 (source follower)
 Low Noise Amplifier
 Automatic Gain Control
 Cascode Amplifier
 Advantage is low input
capacitance suitable for
higher frequencies.
 Such devices are sometimes called IGFETs
(insulated-gate field-effect transistors) or
sometimes MOSFETs (metal oxide
semiconductor field-effect transistors)
 the gate of the MOSFET is insulated from the
channel by a silicon dioxide (SiO2) layer.
 Digital circuits constructed using these
devices are usually described as using MOS
technology
 The E-MOSFET operates only in the
enhancement mode and has no depletion
mode
 Has no structural channel
 Substrate extends completely to the SiO2
layer
 The conductivity of the channel is enhanced
by increasing the gate-to-source voltage and
thus pulling more electrons into the channel
area.
 For any gate voltage below the threshold
value, there is no channel.
 Foran n-channel device, a positive gate
voltage above a threshold value induces a
channel by creating a thin layer of negative
charges in the substrate region adjacent to
the SiO2 layer
 The drain and source are diffused
into the substrate material and
then connected by a narrow
channel adjacent to the insulated
gate.
 TheD-MOSFET can be operated in either of
two modes—the depletion mode or the
enhancement mode—and is sometimes called
a depletion/enhancement MOSFET.
 E-MOSFET
 D-MOSFET
 Laterally Diffused MOSFET (LDMOSFET) The
LDMOSFET has a lateral channel structure
and is a type of enhancement MOSFET
designed for power applications.
 This device has a shorter channel between
drain and source than does the conventional
E-MOSFET.
 The shorter channel
results in lower resistance,
which allows higher
current and voltage.
 VMOSFET (V-groove MOSFET)
 The is another example of the conventional
E-MOSFET
 designed to achieve higher power capability
by creating a shorter and wider channel with
less resistance between the drain and source
using a vertical channel structure.
 The shorter, wider channels
allow for higher currents and,
thus, greater power dissipation
 Frequency response is also
improved.
 TMOSFET
 The gate structure is embedded in a silicon
dioxide layer, and the source contact is
continuous over the entire surface area. The
drain is on the bottom.
 TMOSFET achieves greater packing density
than VMOSFET, while retaining the short
vertical channel advantage.
 Combination of n-channel and p-channel
MOSFETs
 Used to reduced current drain in digital
circuits
 Operates as inverter