 Memory can be classified into two types :

Primary/ Prime memory and Secondary/ Storage

Memory.
Examples of prime memory are R/WM and ROM,
which are used in executing and storing
programs. It should be fast enough to keep up
with the execution speed of the microprocessor.
Examples of storage memory includes magnetic
tapes and discs, which are used to store program
and results after the completion of program
execution. Information stored in this memory is
non volatile.
 PrimaryStorage, also known as main storage
or memory, is the main area in a computer in
which data is stored for quick access by the
computers processor.
 The two main types of Primary storage are :
R/RM (READ WRITE MEMORY) and STATIC
MEMORY.
 Random-access memory (RAM)
is a form of computer data
storage which allows stored
data to be accessed directly in
any random order.
 Used primarily for information
that is likely to be altered
(writing program or receiving
data).
 The memory is volatile. (all
contents are destroyed when
power is turned off).
 The main forms of modern RAM
are static RAM (SRAM) and
dynamic RAM (DRAM).
 Made up of flip – flops, and it stores
the bit as voltage.
 Each memory cell requires six
transistors; therefore, the memory
chip has low density but high speed.
 More expensive and consumes more
power than the dynamic memory.
 In high speed processor, SRAM
known as Cache memory is included
on the processor chip. In addition,
high speed Cache memory is also
included external to the processor
to improve the performance of a
system.
 SRAM is volatile in the conventional
sense that data is eventually lost
when the memory is not powered.
 Stores each bit of data in a
separate capacitor within an
integrated circuit.
 Advantage : High density, low
power consumption and is
cheaper than static memory.
 Since capacitors leak charge,
the information eventually
fades unless the capacitor
charge is refreshed
periodically.
 Extra refreshing circuitry
adds to the cost of the
system.
 Non Volatile Memory
(retains ‘Stored’, even if
the power is turned off).
 Used for programs and
data that need not be
altered.
 The information in here
can only be read (once a
bit a pattern is stored, it
is permanent or at least
semi-permanent).
 The main forms of ROM
are Erasable memory
and permanent memory
 EPROM can be erased by exposure to strong ultraviolet
light (typically for 10 minutes or longer), then rewritten
with a process that again needs higher than usual voltage
applied. Repeated exposure to UV light will eventually
wear out an EPROM, but the endurance of most EPROM
chips exceeds 1000 cycles of erasing and reprogramming.
 EEPROM is based on a similar semiconductor structure to
EPROM, but allows its entire contents (or selected banks)
to be electrically erased, then rewritten electrically, so
that they need not be removed from the computer (or
camera, MP3 player, etc.). Writing or flashing an EEPROM
is much slower (milliseconds per bit) than reading from a
ROM or writing to a RAM (nanoseconds in both cases).
 Flash memory can be erased and rewritten faster than
ordinary EEPROM, and newer designs feature very high
endurance (exceeding 1,000,000 cycles).
 A programmable read-only memory (PROM) is a
form of digital memory where the setting of
each bit is locked by a fuse or antifuse.
Manufactured blank and, depending on the
technology, can be programmed at wafer, final
test, or in system. For Eg: video game consoles,
mobile phones, radio-frequency identification
(RFID) tags.
 Mask ROM (MROM) is a type of read-only
memory (ROM) whose contents are programmed
by the integrated circuit manufacturer (rather
than by the user).
 Since the cost of an integrated circuit strongly
depends on its size, mask ROM is significantly
cheaper than any other kind of semiconductor
memory.
 Secondary Storage, also known as Auxiliary
Storage is used to store a large amount of
data at loser cost per byte than Primary
Memory.
 It is Non-Volatile.
 It is not directly accessible by the CPU, they
are accessed via the input/output channels.
 Two main forms of Static memory are Semi-
random or Sequential Access Memory and
Serial Access Memory.
 Sequential access memory (SAM) is a
class of data storage devices that read
their data in sequence. This is in
contrast to random access memory
(RAM) where data can be accessed in
any order.
 Sequential access devices are usually a
form of magnetic memory.
 Magnetic sequential access memory is
typically used for secondary storage in
general-purpose computers due to
their higher density at lower cost
compared to RAM, as well as
resistance to wear and non-volatility.
 Examples of SAM devices still in use
include hard disks, CD-ROMs and
magnetic tapes. Historically, drum
memory has also been used.
 Serial access memory stores data as a series of
memory cells that can be accessed sequentially
(like a cassette tape).
 The serial access memory includes a
disconnecting circuit connected between a serial
bus line pair and a pre amplifier. A data signal
read out from a memory cell is provided to the
pre amplifier via the serial bus line pair.
 A serial access memory device is responsive to
an externally applied serial out clock signal for
providing in series a stored data signal,
comprising:
I. a plurality of memory cell columns,
II. a plurality of bit line pairs, each
connected to a corresponding one of
said plurality of memory cell columns,
III. a plurality of signal holding means,
each connected to a corresponding one
of said plurality of bit line pairs, for
holding a data signal read out from said
corresponding one memory cell column,
IV. a signal transmission line pair for
transmitting a data signal provided
from said plurality of signal holding
means etc.
 Microprocessor Architecture, Programming,
and Applications with the 8085 – Ramesh
Gaonkar.
 Sequential access memory & Serial access
memory:
http://www.google.com/patents/US5282166