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Vishwanath Joshi
Advanced Semiconductor Devices
EE 698 A
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r 3ntroduction
r Single Electron (SE) Transistor
r SE Turnstiles
r SE Pump
r SE 3nverters
Metal, Semiconductor, Carbon nano-tube
r SE Memory
3

 

r Devices that can control the motion of even a

single electron
r Consist of quantum dots with tunnel junctions
r Simplest device
Single electron box
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r Conditions for observing single electron

tunneling phenomena
Ec > kbT
r Ec = e2/2CȈ
Rt > Rk
r Rk = h/e2 (25.8 KOhms)
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r   terminal switching device

Current flows when Vg = ne/2Cg

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r Single electron is transferred per cycle of an

external RF signal
r ǻEk = -e(|Q|k ± Qck)/Ck
r Qck = e(1+Cek/Ck)/2
r Cek = capacitance of circuit in parallel with junction k
r Ck = junction capacitance

Frequency Locked Turnstile Device for Single Electrons, Physical Review Letters,
Vol 64(22), 28 May 1990, 2691
 


Accuracy of electron counting using a 7-junction electron pump, Applied Physics

Letters, Vol 69 (12), 16 Sept 1996, 1804
 
 



r Al/Al2O  structures have limited operational

temperature and poor operational stability
r Si-based SETs operate at higher temperature
r Place MOSFETs near SET ± control of
channels

Electron pump by combined single-electron/field effect transistor structure, Applied

Physics Letters, Vol 82 (8), 24 Feb 200 , 1221
Î 

r Fabricated on SO3 substrate using standard

MOS process
r Formation of Si island by PADOX method
r Dual gates made of Phosphorous doped
poly-Si are defined
r Again deposit Phosphorous doped poly-Si
and define a broad gate covering entire
pattern
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r Measurements at 25 K
r Vth of MOSFET1 = 0. V
r Vth of MOSFET2 =-0.2V
   
 

r  0 nm wide Si-wire channel and poly-Si gates

defined by E-beam lithography

Current quantization due to single electron transfer in Si-wire charge coupled

device, Applied Physics Letters, Vol 84 (8), 2  Feb 2004, 1 2 
 | |3
 

r Twin Si single electron islands are formed by

V-PADOX

Si complementary single-electron inverter with voltage gain, Applied Physics

Letters, Vol 76 (21), 22 May 2000,  121
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r ùorking of 3nverter
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r 25 nm thick Al patterned to form the lower

electrodes
r Al oxidized in an O2 plasma, 200 mTorr, 5
min, 200 oC
r Second Al deposition

Single-electron inverter, Applied Physics Letters, Vol 78 (5), 19 Feb 2001, 1140
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r ùorking of 3nverter
 |3
  

 




 

r Tunnel barriers fabricated with the local

irradiation of an Ar beam

Fabrication of single-electron inverter in multiwall carbon nanotubes, Applied

Physics Letters, Vol 82 (19), 12 May 200 ,   07
|3
  

 




  



r ùorking of the 3nverter
Ô


D 

r Frequency Locked Turnstile Device for Single Electrons, Physical
Review Letters, Vol 64(22), 28 May 1990, 2691
r Accuracy of electron counting using a 7-junction electron pump, Applied
Physics Letters, Vol 69 (12), 16 Sept 1996, 1804
r Electron pump by combined single-electron/field effect transistor
structure, Applied Physics Letters, Vol 82 (8), 24 Feb 200 , 1221
r Current quantization due to single electron transfer in Si-wire charge
coupled device, Applied Physics Letters, Vol 84 (8), 2  Feb 2004, 1 2 
r Si complementary single-electron inverter with voltage gain, Applied
Physics Letters, Vol 76 (21), 22 May 2000,  121
r Single-electron inverter, Applied Physics Letters, Vol 78 (5), 19 Feb
2001, 1140
r Fabrication of single-electron inverter in multiwall carbon nanotubes,
Applied Physics Letters, Vol 82 (19), 12 May 200 ,   07
r A high-speed silicon single-electron random access memory, 3EEE
Electron Device Letters, Vol. 20, No. 11, November 1999, 58