Quantum Dot Lasers

ECE 580 – Term Project

Betul Arda
Huizi Diwu
Department of Electrical
and Computer Engineering
University of Rochester
Outline
 Quantum Dots (QD)
 Confinement Effect
 Fabrication Techniques
 Quantum Dot Lasers (QDL)
 Historical Evolution
 Predicted Advantages
 Basic Characteristics
 Application Requirements
 Q. Dot Lasers vs. Q. Well Lasers
 Market demand of QDLs
 Comparison of different types of QDLs
 Bottlenecks
 Breakthroughs
 Future Directions
 Conclusion
 Quantum Dots (QD)
 Semiconductor nanostructures
 Size: ~2-10 nm or ~10-50 atoms
in diameter
 Unique tunability
 Motion of electrons + holes = excitons
 Confinement of motion can be created by:
 Electrostatic potential
 e.g. in e.g. doping, strain, impurities,
external electrodes
 the presence of an interface between different
semiconductor materials
 e.g. in the case of self-assembled QDs
 the presence of the semiconductor surface
 e.g. in the case of a semiconductor nanocrystal
 or by a combination of these
 Quantum Confinement Effect
 E = Eq1 + Eq2 + Eq3, Eqn = h2(q1π/dn)2 / 2mc

Quantization of density of states: (a) bulk (b) quantum well (c) quantum wire (d) QD
QD – Fabrication Techniques
 Core shell quantum
structures
 Self-assembled QDs
and Stranski-
Krastanov growth
 MBE (molecular beam
epitaxy)
 MOVPE
(metalorganics vapor
phase epitaxy)
 Monolayer fluctuations
 Gases in remotely Schematic representation of different approaches to
fabrication of nanostructures: (a) microcrystallites in
doped glass, (b) artificial patterning of thin film structures,
heterostructures (c) self-organized growth of nanostructures
QD Lasers – Historical Evolution
 QDL – Predicted Advantages
 Wavelength of light determined by the energy levels not by
bandgap energy:
 improved performance & increased flexibility to adjust the
wavelength
 Maximum material gain and differential gain
 Small volume:
 low power high frequency operation
 large modulation bandwidth
 small dynamic chirp
 small linewidth enhancement factor
 low threshold current
 Superior temperature stability of I threshold

I threshold (T) = I threshold (T ref).exp ((T-(T ref))/ (T 0))

 High T 0  decoupling electron-phonon interaction by increasing the
intersubband separation.
 Undiminished room-temperature performance without external thermal
stabilization
 Suppressed diffusion of non-equilibrium carriers  Reduced
leakage
 QDL – Basic characteristics
Components of a laser
 An active medium to
 An energy pump source create population
 electric power supply inversion by pumping
mechanism:
 photons at some site
stimulate emission at
other sites while
traveling
 Two reflectors:
 to reflect the light in
phase
 multipass amplification
QDL – Basic characteristics

 An ideal QDL consists of a 3D-array of dots with

equal size and shape
 Surrounded by a higher band-gap material
 confines the injected carriers.
 Embedded in an optical waveguide
 Consists lower and upper cladding layers (n-doped
and p-doped shields)
QDL – Application Requirements
 Same energy level
 Size, shape and alloy composition of QDs close
to identical
 Inhomogeneous broadening eliminated  real
concentration of energy states obtained
 High density of interacting QDs
 Macroscopic physical parameter  light output
 Reduction of non-radiative centers
 Nanostructures made by high-energy beam
patterning cannot be used since damage is
incurred
 Electrical control
 Electric field applied can change physical
properties of QDs
 Carriers can be injected to create light emission
Q. Dot Laser vs. Q. Well Laser
In order for QD lasers compete with QW lasers:
 A large array of QDs since their active volume is
small
 An array with a narrow size distribution has to be
produced to reduce inhomogeneous broadening
 Array has to be without defects
 may degrade the optical emission by providing
alternate nonradiative defect channels
 The phonon bottleneck created by confinement
limits the number of states that are efficiently
coupled by phonons due to energy conservation
 Limits the relaxation of excited carriers into lasing
states
 Causes degradation of stimulated emission
 Other mechanisms can be used to suppress that
bottleneck effect (e.g. Auger interactions)
Q. Dot Laser vs. Q. Well Laser
 Comparison of efficiency: QWL vs. QDL
 Market demand of QD lasers

Microwave/Millimeter wave transmission with optical fibers

Datacom network
Telecom network

QD Lasers

Optics
Market demand of QD lasers
Earlier QD Laser Models
 Only one confined
electron level and
hole level
 Infinite barriers
 Equilibrium carrier
distribution
 Lattice matched
heterostructures
Before and after self-assembling technology
Updated QD Laser Models
 Lots of electron
levels and hole
levels
 Finite barriers
 Non-equilibrium
carrier distribution
 Strained
heterostructures
Comparison
High speed Advantages
quantum dot lasers
Directly Modulated Quantum •Datacom application
Dot Lasers •Rate of 10Gb/s

Mode-Locked Quantum Dot •Short optical pulses

Lasers •Narrow spectral width

•Broad gain spectrum

•Very low α factor-low chirp

InP Based Quantum Dot •Low emission wavelength

Lasers •Wide temperature range

•Used for data transmission

Comparison
High power Advantages
Quantum Dot lasers

QD lasers for •Size

reduced
Coolerless Pump quantum dot
Sources
Single Mode Tapered •Small wave length
Lasers shift
•Temperature
insensitivity
Bottlenecks
 First, the lack of uniformity.
 Second, Quantum Dots density is
insufficient.
 Third, the lack of good coupling
between QD and QD.
 Breakthroughs
Fujitsu
Temperature Independent QD laser
2004

Temperature dependence of light-current characteristics Modulation waveform at 10Bbps at 20°C and 70 °C with no current adjustment
Breakthroughs
InP instead of GaAs

 Can operate on ground state for much shorter cavity

length
 High T0 is achieved
 First buried DFB DWELL operating at 10Gb/s in
1.55um range
 Surprising narrow linewidth-brings a good phase
noise and time-jitter when the laser is actively mode
locked

Alcatel Thales III–V Laboratory,

France
2006
 Commercialization

Zia Laser's quantum-dot laser structures comprise an active region that looks
like a quantum well, but is actually a layer of pyramid-shaped indium-arsenide
dots. Each pyramid measures 200 Å along its base, and is 70–90 Å high. About
100 billion dots in total would be needed to fill an area of one square
centimeter. -----www.fibers.org
Future Directions
 Widening to  Reduce inhomogeneous
parameters range linewidth broadening
 Further controlling using
the position and  Surface Preparation
dot size Technology
by
 Decouple the  Allowing the injection of
carrier capture cooled carriers
from the escape
procedure
In term of
 Combination of QD  Raised gain at the
lasers and QW fundamental transition
lasers
energy
Conclusion
 During the previous decade, there was an
intensive interest on the development of quantum
dot lasers. The unique properties of quantum dots
allow QD lasers obtain several excellent
properties and performances compared to
traditional lasers and even QW lasers.

 Although bottlenecks block the way of realizing

quantum dot lasers to commercial markets,
breakthroughs in the aspects of material and
other properties will still keep the research area
active in a few years. According to the market
demand and higher requirements of applications,
future research directions are figured out and
needed to be realized soon.
Thank you!