Field Effect Transistor (FET)

Types of Transistors
Transistors

BJT

FET

NPN

PNP

MOSFET

JFET

TRIAC

Thyristor

IGBT

FETs vs BJTs
Similarities: Similarities:
Amplifiers Switching devices Impedance matching circuits

Differences:
FETs are voltage controlled devices. BJTs are current controlled devices. FETs have a higher input impedance. BJTs have higher gains. FETs are less sensitive to temperature variations and are more easily integrated on ICs. FETs are generally more static sensitive than BJTs.

FETs Types
JFET: Junction FET JFET: MOSFET: MetalOxideSemiconductor FET MOSFET: D-MOSFET: Depletion MOSFET E-MOSFET: Enhancement MOSFET

JFET Advantages & Uses

Advantages
low power high gate impedance low S/D resistance

Uses
amplifier analog switch

Design
gate==base source==emitter drain ==collector

JFET Symbols

N-Channel JFET Symbol

P-Channel JFET Symbol

JFET Construction

JFET Construction
There are two types of JFETs n-channel p-channel The n-channel is more widely used.

There are three terminals: Drain (D) and Source (S) are connected to the n-channel Gate (G) is connected to the p-type material

JFET Operation: The Basic Idea

JFET operation can be compared to a water spigot. The source of water pressure is the accumulation of electrons at the negative pole of the drain-source voltage. The drain of water is the electron deficiency (or holes) at the positive pole of the applied voltage. The control of flow of water is the gate voltage that controls the width of the n-channel and, therefore, the flow of charges from source to drain.

JFET Operating Characteristics

There are three basic operating conditions for a JFET: VGS = 0, VDS increasing to some positive value

VGS < 0, VDS at some positive value

Voltage-controlled resistor

JFET Operating Characteristics (VGS = 0 V)

Three things happen when VGS = 0 and VDS is increased from 0 to a more positive Voltage
1. The depletion region between p-gate and n-channel increases as electrons from n-channel combine with holes from p-gate. 2. Increasing the depletion region, decreases the size of the n-channel which increases the resistance of the n-channel. 3. Even though the n-channel resistance is increasing, the current (ID) from source to drain through the n-channel is increasing. This is because VDS is increasing.

JFET Operating Characteristics (VGS = 0 V)

If VGS = 0 and VDS is further increased to a more positive voltage, then the depletion zone gets so large that it pinches off the n-channel. This suggests that the current in the n-channel (ID) would drop to 0A, but it does just the opposite as VDS increases, so does ID. But as this happens the depletion region tightens and the resistance increases so the current goes back to IDSS.

JFET Operating Characteristics (Saturation) Saturation)

At the pinch-off point:
Any further increase in VDS does not produce any increase in ID. VDS at pinch-off is denoted as Vp. ID is at saturation or maximum. It is referred to as IDSS. The ohmic value of the channel is maximum.

JFET Operating Characteristics

As VGS becomes more negative, the depletion region increases.

JFET Operating Characteristics

As VGS becomes more negative:

The JFET experiences pinch-off at a lower voltage (VP). ID decreases (ID < IDSS) even though VDS is increased. Eventually ID reaches 0A. VGS at this point is called VGS(off)..

VGS(off)

JFET Operating Characteristics

Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases uncontrollably if VDS > VDSmax

JFET Operating Characteristics

Voltage-Controlled Resistor
The region to the left of the pinch-off point is called the ohmic region.
The JFET can be used as a variable resistor, where VGS controls the drain-source resistance (rd). As VGS becomes more negative, the resistance (rd) increases.

rd =

ro VGS 1 VP
2

VGS(off)

p-Channel JFETS
The p-channel JFET behaves the same as the n-channel JFET, except the voltage polarities and current directions are reversed.

JFET Transfer Characteristics

The transfer characteristic of input-to-output is not as straightforward in a JFET as it is in a BJT. In a BJT, (output). indicates the relationship between IB (input) and IC

In a JFET, the relationship of VGS (input) and ID (output) is a little more complicated:

VGS ID = IDSS 1 VP

JFET Transfer Curve

This graph shows the value of ID for a given value of VGS. And effect of VDS on ID for that VGS.

Plotting the JFET Transfer Curve

Using IDSS and VGS(off) values found in a specification sheet, the transfer curve can be plotted according to these three steps:

Step 1: Solve Step 2 Solve Step 3: Solve

1 1
1

for VGS = 0V
2

for VGS = Vp ( aka VGS(off) )

for 0V uVGS u Vp in 1V increments for VGS

JFET Specifications Sheet

Electrical Characteristics (TA = 25 Deg Centigrade unless otherwise noted)

JFET Specifications Sheet Maximum Ratings

Case and Terminal Identification

MOSFETs

MOSFETs
MOSFETs have characteristics similar to JFETs and additional characteristics that make them very useful
There are 2 types of MOSFETs:
 Depletion mode MOSFET (D-MOSFET) Operates in Depletion mode the same way as a JFET when VGS e 0 Operates in Enhancement mode like E-MOSFET when VGS > 0

 Enhancement Mode MOSFET (E-MOSFET) Operates in Enhancement mode IDSS = 0 until VGS > VT (threshold voltage)

Depletion Mode Type MOSFETs

(D Type-MOSFET) Type-

Depletion Mode MOSFET Construction

The Drain (D) and Source (S) leads connect to the to n-doped regions These N-doped regions are connected via an n-channel This n-channel is connected to the Gate (G) via a thin insulating layer of SiO2 The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS

Depletion Mode MOSFET Basic Operation

A D-MOSFET may be biased to operate in two modes: the Depletion mode or the Enhancement mode

D-MOSFET Depletion Mode Operation

The transfer characteristics are similar to the JFET. So In Depletion Mode operation: When VGS = 0V, ID = IDSS When VGS < 0V, ID < IDSS The formula used to plot the Transfer Curve, is:

VGS ID = IDSS 1 VP

D-MOSFET Enhancement Mode Operation

In this mode, the transistor operates with VGS > 0V, and ID increases above IDSS Shockleys equation, the formula used to plot the Transfer Curve, still applies but VGS is positive: 2

ID

IDSS 1

p-Channel D-MOSFET Enhancement Mode DOperation

The p-channel Depletion mode MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed

D-MOSFET Enhancement Symbols

Specification Sheet

Maximum Ratings

Specification Sheet
Electrical Characteristics

Enhancement Mode Type MOSFETs

(E Type-MOSFET) Type-

Enhancement Mode MOSFET Construction (n Channel)

The Drain (D) and Source (S) connect to the to n-doped regions. These n-doped regions are not connected via an n-channel The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2. There is no channel The n-doped material lies on a pdoped substrate that may have an additional terminal connection called the Substrate (SS).

Enhancement Mode MOSFET Basic Operation

The enhancement type MOSFET operates only in the enhancement mode

VGS is always positive As VGS increases, ID increases

VDSsat

As VGS is kept constant and VDS is increased, then ID saturates (IDSS) and the saturation level, VDSsat is reached

E-Type MOSFET Transfer Curve

To determine ID given VGS:

I D ! k (VGS  VT ) 2

Where: VT = threshold voltage or voltage at which the MOSFET turns on k= a constant, can be determined by using values at a specific point and the formula: I

k!
VDSsat can be calculated by:

D ( ON )

(VGS ( ON )  VT ) 2

VDsat = VGS VT

p Channel E-Type MOSFET E-

The p-channel enhancement-type MOSFET is similar to the n-channel, except that the voltage polarities and current directions are reversed.

MOSFET Symbols

Specification Sheet

Maximum Ratings

*Transient potentials of 75 Volts will not cause gate-oxide failure.

Specification Sheet
Electrical Characteristics

Handling MOSFETs
MOSFETs are very sensitive to static electricity. Because of the very thin SiO2 layer between the external terminals and the layers of the device, any small electrical discharge can create an unwanted conduction.

Protection
 Always transport in a static sensitive bag. Always wear a static strap when handling MOSFETS. Apply voltage limiting devices between the gate and source, such as back-to-back Zeners to limit any transient voltage.

Summary Table

JFET

Ri " 100 M; C j : (1  10) pF

Summary Table

D-Type MOSFET

i j

" 10 ; : (1  10) p

10

Summary Table

E-Type MOSFET

i j

" 10 ; : (1  10) p

10