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(1) Magnetic recording (a) General (longitudinal recording) (b) Thermal stability (c) Advantage Media Oriented longitudinal media Anti-ferromagnetic coupling media Perpendicular recording Pattern media and nano-particle media High Ku medium (HAMR) (2) Magneto-optical recording (3) MRAM (STT RAM) and Flash disc (4) RRAM and PRAM (Random Access Memory) (5) Optical storage and other memory
1Tbits/in2
100Gbit in-2
Areal density progress in magnetic recording since its invention (Moser et al. J.Phys D: Phys. 35(2002)R157-167)
Magnetic recording areal density growth along with transistor count per integrated circuit device (McDaniel J. Phys: Condens. Matt. 17(2005)R315).
Areal density trends in HDD magnetic recording (Fujitsu Sci. Tech. J., 42(2006)122).
Industry first 120 GB 2.5-in Seagate Momentus high capacity mobile drive using TMR reading element (IEEE on Mag. 42(2006)97).
Schematic drawing of longitudinal recording system. B is the bit length, W is the track width and t is the medium thickness. d is flying height of the head abov the medium.
Transition width
(a) magnetization of two transition at x=0 and 200nm. (b) magnetic field detected by read head, solid line is for longitudinal. pw50 is shown for a read head with zero gap.
SNR0.31PW50BWread / B2Wread /
2
2d(1+
2)
d3 (1+ 2)
B is bit length, Wread is read width of head, is transition parameter, d grain diameter, normalized grain size distribution width
PtCoCrB films
Write head : having a sufficient high Ms so that the fringe field exceeds the Hc of the medium (500-3000Oe); an adequate magnetic permeability (easy saturated). Read head: low Hc, low noise and extremely high permeability in order to respond with a substantial change in flux to the weak fringe field above the medium
Schematic M-H loop for ideal magnetic recording medium and head material. For write head: For read head: >>1, Ms large and Br=0; >>1 , Hc = 0
Thin film recording head. Left, layout of pole pieces and windings; right, enlarged, cross-sectional view of magnetic pole pieces
Summary
(1) SNR0.31PW50BWread / 2d(1+ 2) B2 Wread /
2
d3 (1+ 2),
(2) Transition width (depends on Mrt / Hc) (3) Signal: small Mrt, large Hc, small distance between head and disc, large GMR or TMR (4) Areal density: decreasing the dimensions: B, WRead, diameter of grain.
1980: 1st thin film read head, continuous magnetic thin film with high Hc, small (25% CGR); 1990: 1st MR read head, decreasing thickness and, in turn, the transition distance (80% CGR); 1997: 1st GMR read head (100% CGR); 2000: 1st AFM medium, increasing the effective volume. 2006: 1st TMR head for 80-100 Gbit in-2 longitudinal recording
Thermal Stability
In the physics of magnetic recording there are two key factors in achieving very high areal density: (1)The superparamagnetic effect (thermal stability); (2)The finite sensitivity of the readback head. In both cases, the limitations arise because the signal energy becomes so small as to be comparable with the ambient thermal energy.
The signal to media noise is approximately by the number of magnetic grains (or switching units) per bit: SNRmedia ~ Wbt / V Where, wbt (bit volume, read-width x bit-length x thickness) v (the grain volume) In order to avoid thermal instability, a minimal stability ratio of stored magnetic energy, KuV, to the thermal energy, KBT, KuV/KBT 50 - 70
A perfect orientation (large Ku) carries out: (1) a low media noise (2) a high signal level (3) a smaller transition parameter (4) a narrower switching field distribution OR = Mr / Mr per >2.5 for current L media mechanically texturing metal disk substrate anisotropic etching of the substrate directional deposition of the media
in Co/Ru/Co MLs
(Parkin PRL 64 (1990)2304).
Schematic illustration of (a) a two layered AFC media, (b) LAC media with high J and (c) advanced three layers LAC media for much lower Mr .
KuV/KBT
single layer media (a) and (b) an AFC media, Jex=0.06 erg/cm2, Hex~800 Oe.
50 - 70
APL 77(2000)3806
Fitted by Eq.(1)
Comparison of amplitude loss as aresult of thermal degration of single layer media and AFC media
Design (AFC media) Bit length, B (nm) Track width, W (nm) Magnetic coecivity, Hc (Oe) Mrt (memu/cm2) Grain size (nm) Head to media spacing (nm) Shield to shield spacing, g(nm) Transition parameter, a (nm) Pulse width PW50 (nm) User bit density (pw50/B)
Magnetic Recording
(1) Traditional longitudinal recording is approaching to its limit (100 Gbit in-2 is achieved ). (2) perpendicular recording offers about 421Gbit/in2 (Seagate demo) and 178.8Gbit/in2 (market). (3) the next big challenge is 1 Tbit in-2 for recording industry. The possible models : pattern media; high Ku media (HAMR); STT (Spin torque transfer) RAM.
perpendicular recording
Schematic drawing of a perpendicular recording system with SUL and a single pole head.
Advantages of PA recording: a. high orientation ratio b. lower media noise ( smaller) c. increase of signal and thermal stability d. writing field large
Perpendicular Recording
*Toshiba extends 2.5-inch mobile HDD Family with 200GB market-leading capacity (178.8 Gb/in2) (May 2007 market), *Fujitsu intros 250GB perpendicular drive (second quarter of 2007), *In the first half of 2007, Hitachi has brought hard drive areal density halfway to the 345 Gbits/sq. in. market with the 1 TB, 3.5-inch (Deskstar 7K1000). * Seagate 500GB for 2.5-inch (notebook), 2.5TB for 3.5 inch desktop (41650 hours music, 800,000 photo, 4100 hours digital video) to emerge in 2009. (Hitachi demo)
Magnetic recording on a CoPd/Pd/CoPd dot array: (a) GMR readback signals after dc magnetizing the sample (00) state and after applying a write pulse of 30 and 50 mA, creating, respectively, states (01) and (11);(b) SMRM image
(a) topography image of the patterned area. P2 is write pole. (b) Magnetic force microscopy image of a square wave pattern Thermal stable, even if Ku is small; transition parameter
TEM image of a 3D assembly of FePt nanoparticles. Image size is 130nm x 130nm and particle diameter is 4nm. Nanopartical media are made in a chemical process, then annealed to obtain a hard magnetic phase.
HAMR
AD = p K / hNkBT
= 10nm, K=7x107 erg cm-3 h= KV/kBT= 60, T=330K, p=0.56 Lbit =2.64 nm(10-12 atoms) cross-section of the bit, 60-80 atoms volume 8 x 8x 50=3200 to 9 x 9x 50=4050 atoms Given AD92 Tbin-2
McDaniel Seagate Ultimate limit to thermally assisted magnetic recording J Phys:C 17(2005)R315-332
hybrid recording
ZnS:SiO2 NA ~1.1
Fujitsu paves way for 5TB hard drives (1Tbits/in2, 04/12/2006 demo a spot size 88nm x60nm using HSRM)
SmCo has a Ku value about three times high FePtX, and this might push AD estimate into 250-300 Tbin-2. The entire printed contents of the United State Library of Congress ( ~10Tb) could be stored on a 30 mm diameter disk (50Tb/in2). This is about the size of US fifty-cent coin.
Magneto-optical Effect
is defined as the main polarization plans is tilted over a small angle; k = arctan(b/a).
k
Magneto-optical Recording
Principle of thermomagnetic recording (Curie point writing): (a) before, (b) during and (c) after the writing.
From Oppeneer Magneto-optical Kerr spectra in Handerbook of magnetic Materials, Edited by Buschow (Vol.13)
Experimental pola Kerr ritation an undoped MnBi sample (Di et al. 1992) and Al-doped MnBi (Shang et al., 1997) sample at room temperature.
High-density MRAM
(Magnetic random access memories)
Schematically representation of MRAM structure and M-H, R/R characteristics of the PSV.
Schematic of the read and write processes in a PSV random access memory.
Table: composition and dimensions of the principle layers in a current representative MARM device.
Advantage of MRAM
(1) It combines the speed of SRAM with the non-volatility of flash (2) It also offers a low-power memory solution which eventually may match DRAMs capacity and density (3) No limit for write-read cycles (flash 100,000) (4) Radiation-resistant 7/2 2006 Toshiba and NEC, 16 megabit density, read write speed 200 Mbytes/sec, operation at 1.8V, a chip 78.7 mm2; 9/6 basic technology for 256 Mbit 4Mbits MRAM enter in market (2007 March meeting). As embedded memory in Automobiles, $20 for a half megabyte. Disadvantage
The MgO-based magnetic tunnel junction film Ta/CuN/Ta/PtMn/CoFe/Ru/CoFeB/MgO/ CoFeB/Ta. (Lee etal., IEEE Trans on Mag 43(2007)917).
Fig. 2. Magnetoresistance versus variation current in MgO-based MTJ structures using a current pulse width of 200 s.
Fig. 3. Read/write cycle test. Inset: Resistance change over 110 cycles with a current pulse width of 200 s.
STT RAM
(a) a 20 m wide channel with three pairs of Hall probes. (b) a domain wall was prepared at the boundary of regions 1 and 2, and its position after application of a current pulse was monitored by RHall=VHall/l, Hc1 >Hc3 >Hc2
83K
At t=0, the domain wall is at the boundary of regions 1 and 2; when a negative current pulse is applied, M direction in region 2 is reversed.
initial state
Fig. 1. STT-RAM addresses each bit individually by flowing current directly through the bit. Unintended writing errors are completely eliminated.
Fig. 1. STT-RAM addresses each bit individually by flowing current directly through the bit. Unintended writing errors are completely eliminated.
Fig. 2a " Conventional MRAM cell. A magnetic field, generated by the bit line, cladding, and write word line, is used to switch between the "0" and "1" states.
Fig. 2b " STT-RAM cell. By eliminating the write word line, bypass line and cladding, a STT-RAM cell is considerably smaller than a conventional MRAM cell.
Fig. 2c " Total required current in STT-RAM continues to scale lower with increasingly smaller geometries. Conversely, conventional MRAM switching current increases with smaller geometries.
spin polarization along the axis parallel to the vector ML of local ferromagnetic polarization in will be present in the electrons impinging on MR.
S1,2 = (Ieg/c)S1,2 x (S1 x S2)
g = [ -4+(1+p)3(3+S1S2)/4p3/2]
(J.C.Slonczwski 3M 159(1996)L1)
Fig. 1. Plan-view and side-view scanning micrographs of a and b arrays of Co circular rings, c NiFe/FeMn elliptical rings, d NiFe/Cu/Co elliptical rings, and e and f NiFe/Cu/Co pseudo-spin-valve elliptical ring device with six nonmagnetic contact wires.
We have achieved nearly 100% vortex reversal in the asymmetric nanorings, while the symmetric nanorings can accommodate only 40%.
PRL 96(2006)027205
Nanoring fabrication
(a) AAO (porous anodic aluminium oxide membranes), (b) 100 nm Fe film by RF, (c) and (e) Fe nanoring in AAO pores.
SEM micrograph of the top view of the as prepared AAO template. The inset shows the oblique view of AAO showing the aligned nanochannls.
From the end of Jun, the 32GB SSD will be sold through memory specialist just Rarm as part of its integral brand For $350 ,
Competition Between Hard Disc and Flash Disc ------------------------------------------------------------Flash can be a potential replacement for hard disks because of its high performance, noise free running, light weight, fast data access and less power consumption.
iSuppli believes that by the fourth quarter of 2009, 24 million Notebooks will be sold with some form of flash data storage, compared to 143,600 in the first quarter of 2007. That's nearly 60 per cent of anticipated laptop sales. But the price factor is still the most active barrier.
Seagate 500GB for 2.5-inch (notebook), 2.5TB for 3.5 inch desktop (41650 hours music, 800,000 photo, 4100 hours digital video) to emerge in 2009. (Hitachi demo)
RRAM
55$0 VWURQJO\FRUUHODWHG
due to de-localization of localized valence electrons by high electric fields (IEEE 2005).
Sharp Develops Basic Technology for RRAM, Next-Generation Nonvolatile Memory -------------------------------------------------------------------------Dec 11 ,2006
A memory capable of programming data at rates about 100 times faster than flash memory. These results are the first step toward the practical use of this memory technology. It will continue in the future aimed at bringing a commercially viable product to market.
the 'phase-change' material changes phase from one to another using pulses of electric current. A doped Antimony Tellurium (SbTe) compound, unlike other attempts at phase-change memory, well-suited to the standard CMOS process used to make most computer chips. The material's phase change is fast, taking place in under 30ns, in the prototype cell. That is 100 to 200 times faster than today's Flash memory cells, and getting awfully close to DRAM speeds.
(1) SONY disc diameter=13 cm, (2) Matsushta prototype, two recording layers (3) disc diameter=9cm, (4) disc diameter=5 cm. Sony: 23GB, 11Mb/s (2003); 50GB, 22Mb/s (2005);100GB,43 MB/s (2007)
HARM+PM HARM
holographic technology
Two coherent beams are necessary.The one is an information bea including user data, the other is a reference beam. During the recor process, they interfere with each other, and the interference pattern recorded in the media, called a hologram.
In the reconstructing process, the information beam can be recon structed when the reference beam incident on the hologram.
SUMMARY
(1) Longitudinal Recording
AD 120Gbits/in2 SNR B2 Wread / 2 d3 (1+ 2), Thermal stability KuV/KBT 50 70
References
(1) Magnetic Recording :Advancing into the future A.Moser, K.Takano et al., J. Phys.D:Appl.Phys. 35(2002)R157-167. (2) Longitudinal Magnetic Media Designs for 60-200Gb/in-2 Recording Gerardo A. Bertero et al., IEEE Trans. on Mag. 39(2003)651. (3) The limits to magnetic recording ---media consideration. K.OGrady, H.Laidler J of Magn. Magn. Matt. 200(1999)616-633. (4) Recording on bit-patterned media at densities of 1Tb/in2 and beyond H.J.Richter et al., IEEE Trans on Mag 42(2006)2255. (5) Heat-assisted magnetic recording R.E.Rottmayer et al., IEEE Trans on Mag 42(2006)2417. (6) Magnetic bistability and controllable reversal of asymmetric ferromagnetic nanorings F.Q.Zhu et al., PRL 96(2006)027205. (7) Current-driven switching of magnetic layers C.Heide et al., PRB 63(2001)064424
Thanks !
Three-Dimensional Multilayered Optical Memory Using Two-Photon Induced Reduction of Au3+ Doped in PMMA
Akihiro Ohta, Masao Miyamoto, Yoshimasa Kawata, and Masahito Nakabayashi