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Overview
Introduction CMOS CMOS Scaling Strained Silicon Why Strained Silicon ? How does it work ? How do we make it ? Drawbacks Conclusions References
The first ever MOSFET transistor was designed by M. M. Atalla, D. Kahng, and E. Labate in late1959
CMOS
Complementary Metal-oxide-semiconductor field-effect transistors CMOS devices based on sophisticated Si are a fundamental building block for mainstream integrated circuits Technology drivers in the microelectronics industry Due to excellent scalability and integration ability
Moores Law
More and more transistors every year Higher and higher speeds How can we continue to innovate and move faster?
CMOS scaling
Scaling of CMOS devices has reached in nanometers At nanoscale short channel effects occurs SCE will degrade the current drivability and electron mobility of MOSFET Therefore, further improvement is required to go ahead in scaling
CMOS scaling
To follow Moores Law, we will have to innovate and use materials that results in further scaling without performance degradation
Overview
Introduction CMOS CMOS Scaling Strained Silicon Why Strained Silicon ? How does it work ? How do we make it ? Drawbacks Conclusions References
Strained Silicon
As gate length shrinks, mobility decreases
Strained Silicon
Strained Silicon
Drain Current Improvement
Strained silicon
How does it work? Basic idea: Change the lattice constant of the material Changes energy band structure!
Strained Silicon
Uniaxial strain reduces effective mass Biaxial Strain splits LH and HH bands, reduces scattering
In recent years, scaling has become more difficult Idea revived at MIT in early 1990s
Biaxial Fabrication
Biaxial techniques pioneered first Method preferred by IBM though examined by all major semiconductor firms Graded SixGe1-x layer grown on silicon substrate
Si Lattice constant = 5.4309 Ge Lattice constant = 5.6575
Biaxial Fabrication
Additional SixGe1-x grown on top of graded layer Thin layer of silicon epitaxially grown on layer of SiGe
SiGe has larger lattice constant than Si (1% larger) Strains the x and y directions
But wouldnt it be good if we could do strained silicon on insulator without SiGe underlayer?
Uniaxial Strain
Method preferred by INTEL Problems with Biaxial strain
Uniaxial Strain
NMOS
Standard fabrication
Cap with SiNx
High temperature deposition Uniaxial Strain Only one direction
Uniaxial Strain
PMOS
Remove source and drain Selectively grow epi-SiGe in source and drain Nickel Silicide grown on source, drain and gate
Overview
Introduction CMOS CMOS Scaling Strained Silicon Why Strained Silicon ? How does it work ? How do we make it ? Drawbacks Conclusions References
Drawbacks
Strain is always a problem
Unwanted strain changes wave functions Work always done to remove the strain Proposals to actually increase the strain instead
Conclusions
Strain in Silicon can increase mobility in NMOS and PMOS FETs Biaxial and Uniaxial strain techniques are developed In use by major players
References
Alexey G. Shapin, Sergey V. Kalinin Strained Silicon as New HighSpeed Technology. 7th International Siberian Workshop And Tutorials, EDM2006 Zoolfakar A.S, Ahmad A. Holes Mobility Enhancement Using Strained Silicon,SiGe Technology. 5th International Colloquium on Signal Processing & Its Application(CSPA) Min Chu, Yongke Sun Strain: A Solution for Higher carrier mobility in Nanoscale Silicon Annual Review of Material Research 2009
K. Mistry, M. Armstrong Delaying Forever: Uniaxial Strained Silicon Transistors in a 90nm CMOS Technology 2004 Symposium on VLSI Technology Digest of Technical Papers M. Reiche O. Moutanabbir Strained Silicon Devices Solid State Phenomena Vols.
156-158 (2010) pp 61-68
A.G.ONeill, S H Olsen Strained Silicon Technology, 2006 IEEE Scott E. Thompson, Guangyu Sun Uniaxial-Process-Induced Strained Si:Extending the CMOS Roadmap IEEE Transactions on Electron devices, vol. 53, no. 5, May 2006
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