FABRICATION AND

CHARACTERIZATION OF
Au/n-Si/Au METAL
SEMICONDUCTOR METAL
STRUCTURE

By

SOUMO GHOSAL
SHRABANI SAMADDAR

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 Detector Technologies
Layer Structure Features
Simple, Planar,
MSM Semiinsulating GaAs
Low Capacitance
Low Quantum
( Metal Semiconductor Metal)
Efficiency
Contact InGaAsP p 5x1018 Trade-off Between
PIN Absorption InGaAs n- 5x1014 Quantum efficiency
Contact InP n 1x1019 and Speed

Contact InP p 1x1018 Gain-Bandwidth:

Multiplication InP n 5x1016 120GHz
APD Transition InGaAsP n 1x1016 Low Noise
Absorption InGaAs n 5x10 14 Difficult to make
Contact InP n 1x1018 Complex
Substrate InP Semi insulating

Waveguide Absorption Layer High efficiency

High speed
Guide Layers Difficult to couple into

Key: Absorption Layer Contact layers

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 MSM Detectors
Simple to fabricate Light
Schottky barrier
gate metal
Quantum efficiency: Medium
Problem: Shadowing of absorption
Semi insulating GaAs
region by contacts

Capacitance: Low Simplest Version

Bandwidth: High
To increase speed
Can be increased by thinning absorption layer and decrease electrode spacing
backing with a non absorbing material. Electrodes and absorption depth
must be moved closer to reduce transit time.

Compatible with standard electronic Absorption

processes layer

GaAs FETS and HEMTs E Field

InGaAs/InAlAs/InP HEMTs Non absorbing substratepenetrates for
~ electrode spacing
into material

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 Schottky Contacts and Ohmic Contacts
Compared

Contacts satisfy Ohm's law.

Semiconductor is very highly
doped.
Schottky barrier depletion region
very thin depletion layer becomes
quite transparent for electron
tunneling.
Better to use a metal with a
work function m, which is
equal to or smaller than the
work function of a semiconductor, s .
Schottky contact is to GaAs doped at 1015 cm-3

Ohmic contact resistance is 104 Ωcm2.

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 A Comparative Study of Si and GaAs
Metal-Semiconductor-Metal Photodetectors

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 BEAKER CLEANING

WAFER CLEANING
 DI water and ultrasonically agitation.
 Boiled with hot (TCE) at 80 to 850C for 10-15min.
 TCE is removed by acetone.
 Acetone is removed by rinsing with DI water.
 Soln of NH4OH , H2O2 and H2O at the ratio of 1:1:8 , and
kept it for 10-15 minutes at 80 to 850C & then rinsed with DI
water
 A solution (8 : 2 : 1 parts by volume of H2O : H2O2 : HCl ) at
60-70oC for about 10 minutes to remove heavy metals.
 Dipped for few seconds in 10% solution of HF to remove the
SiO2 layer.
 Cleaned with DI water to make it hydrophobic.

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WAFER SPECIFICATIONS :
Crystal Orientation: <111>[n-type]
Substrate resistivity: 1.5 ohm cm
Wafer thickness: 300 +
- 25 μm

The Ultrasonic Vibrator

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 METALLIZATION

HIGH VACUUM CREATION

DEPOSITION OF METAL ON ONE SIDE
RETURNING TO NORMAL CONDITIONS
DEPOSITION OF METAL ON OTHER SIDE

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 Electron Beam
Generator Metallization Unit
Penning Gauge

Vacuum Measuring Gauges Vacuum Chamber

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 PHOTOLITHOGRAPHY & ETCHING
Wafer is subjected to photoresist(-ve) and then it was rotated at
2500rpm in a photoresist spinner .

Wafer heated at a temperature of 100 ºC for 15 min in a hot air oven

to increases the resist adhesion to wafer.

Exposed to U-V light through a photomask for 5 mins.

Under exposition of light, the wafer became hard.

Dissolved in developer solution

Removal of the developer by rinsing .

Post-baked in order to dry-out for at least 20 min at 125ºC.

Post- baking makes the image permanent.

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 The Circuit set up for I-V Measurement

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 IV Characteristics of MSM structure with and without Illumination
80

60

Current (mA)
40

20

0
-0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
Voltage (V)
-20

-40

-60

-80

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 Characterization

1200

CV Characteristics
1000

800
Capacitance (pF)

600

400

200

0
0 2 4 6 8 10 12 14 16 18 20
Bias Voltage (volts)

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 The FESEM Instrument used at IACS, Jadavpur
for study of surface morphology

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 Surface Characterisation

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 Cross Sectional SEM

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 Cross Sectional View of the lower junction

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EDAX analysis of Pos1 showing presence of Au,Cr and Si

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 Qualitative and Quantitative Analysis of Pos1 of the
Sample

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 Bibliography
1. Chou, S. Y., Liu, Y. and Fischer, P. B., Appl. Phys. Lett. 61,477 (1992).

2. Physics of Semiconductor Devices, Second edition, S. M. Sze, Wiley & Sons, 1981,
Chapter 5.

3. Device Electronics for Integrated Circuits, Second edition, R.S. Muller and T. I.
Kamins, Wiley & Sons, 1986, Chapter 3.

4. Physica Scripta. Vol. T69, 163-166, 1997

A Comparative Study of Si and GaAs Metal-Semiconductor-Metal Photodetectors
K. Honkanen,' T. Siirtola,' T. Majamaa,' A. Hovinen' and P. Kuivalainen','

5. “Fabrication and modelling of SOI and GaAs MSM Photodetectors and GaAs based
photreceivers.” - Dissertation for the degree of Doctorate in Technology by Katri.
Honkanen, Helsinki University of of Technology.

6. “Current transport in Metal – semiconductor Barriers”-C. R. Crowell & S. M. Sze

solid state electronics , 9, 1035 . ( 1966 )

7.Solid State Electronic Devices. B .G .Streetman

8. Semiconductor Opto-Electronic Devices .Pallab Bhattacharya

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