Department of Technical Education

Andhra Pradesh
Name : R.Rama Rao
Designation : Lecturer.
Branch : Electronics & Communication Engineering.
Institute : Govt. Polytechnic (w), Bheemunipatnam,
Visakhapatnam Dist.
Year/Semester : Third Semester.
Subject : Electronics circuits-1
Subject Code : E.C-302
Topic : Transistor Amplifiers.
Duration : 50min.
Sub-Topic : Diode Compensation techniques
Teaching Aid : PPT. EC302.29 1
 RECAP

Earlier we have studied about

 Selection of operating point

 Stability of operating point

 Different methods of biasing

EC302.29 2
 OBJECTIVES

On completion of this topic student will be able to

understand

 Need for Bias compensation

 Types of Bias compensation

 Diode compensation

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 Need for bias compensation

• The operating collector current IC in a transistor amplifier

can be stabilized with respect to the variations in ICO, VBE


and by using any of the biasing circuits
• In certain cases due to negative feedback loss in signal
gain is intolerable which effect the operating point
• Using Compensation techniques drift of the operating
point can be reduced

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• Stabilization techniques refer to the use of resistive
biasing circuits which permit IB to vary so as to keep IC
relatively constant

• Compensation techniques use temperature sensitive

devices to compensate for the variation in currents

• Often, a mixture of both the stabilization and

compensation techniques are used

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 Devices used to compensation

• Diodes
• Transistors
• Thermistors
• Sensistors

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Compensation provided by Diodes

• Compensation for variations in Base – Emitter voltage

VBE. (Silicon transistors)

• Compensation for variations in reverse saturation current

IC0. (Germanium Transistor)

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DOIDE COMPENSATION FOR VARIATIONS IN
BASE – EMITTER VOLTAGE VBE.

EC302.29 8
Diode compensation ckt for variations against VBE

Fig. 1

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Equivalent circuit
Fig. 2
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 Working of the circuit

• The circuit utilizes the self Bias stabilization and diode

compensation using silicon transistor.

• The diode is kept forward biased by the source VDD and

resistor RD.

• The diode employed is of the same material and type of

the transistor to have the same temperature coefficient
(-2.5 mv/°c).

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Circuit analysis
c
Applying kirchhoff’s voltage law to the base portion

• VTH = IBRTH + VBE + IERE - VD

• IE = IB + IC

• VTH = IBRTH + VBE + (IB + IC) RE–VD

= IB(RTH + RE) + ICRE + VBE -VD

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Circuit analysis (contd)

IC = β IB + (1+ β)ICO

VTH =
[ IC – (1+ β)ICO

β ] (RTH + RE) + ICRE + VBE -VD

(I C[RTH + (1+β)RE ] =β [VTH – (VBE – VD )] + (1+β )ICO(RTH+RE

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 Circuit analysis (contd)
β [VTH – (VBE – VD)]+ (1+ β) ICO (RTH +RE)
Collector current IC =
RTH + (1+ β)RE

• Variations in VBE and VD are same due to temperature

variation.

• (VBE-VD) remains unchanged.

• Collector current IC becomes insensitive to variations in

VBE. EC302.29 14
DIODE COMPENSATION FOR VARIATION IN IC0

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Diode compensation circuit against variations of ICO
Fig. 3

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Working of the circuit.

• The figure shows the circuit using diode compensation

for a Germanium transistor.
• In Germanium transistors changes in reverse saturation
current IC0 with temperature variations cause change in
collector stability.
• The Diode D is used in the circuit of the same material
and type as the transistor.

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 Working of the circuit (Contd)
• The reverse saturation current of the transistor IC0 and

of the Diode I0, will increase with the increase in

temperature.

• From the circuit diagram

I = (VCC- VBE/R1 ≅ VCC/ R1 )

= Constant

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 Working of the circuit (Contd)

• VBE is very small in comparison with the VCC.

• Since Diode is reverse biased by the VBE the current

through diode is the reverse saturation current I0.

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Working of the circuit (Contd)

• Base current IB = I - I0

∴ IC = βIB + (1+ β)IC0

= βI - βI0 +(1+ β) IC0

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 SUMMARY
• If β >>1

• If I0 and IC0 track each other in the desired temperature

range.

• Then IC remains constant.

• This is because the current flowing through the diode

and reverse saturation current of the transistor cancel

each other.

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 SUMMARY

• In order to avoid loss in signal gain due to negative

feedback compensation is required.

• Effects on VBE , β of a transistor by temperature are to be

compensated for better stability of the operation point of
the amplifier.

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 SUMMARY

• This bias compensation uses a diode for the variations

in VBE and IC0.

• The diode and transistors used should be of same type

and material

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QUIZ
1. Loss in signal gain is due to

A) positive feedback

B) negative feedback

C) modulation

D) amplification

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• Transistor used for compensation in VBE

A) Germanium

B) Silicon

C) Carbon

D) Teflon

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• Transistor used for compensation in IC0

A) Germanium

B) Silicon

C) Carbon

D) Teflon

EC302.29 26
 FREQUENTLY ASKED QUESTIONS

• What is bias compensation and why it is required?

• Explain with circuit diagram how the compensation is done

for variations in VBE due to temperature variations.

• Explain with circuit diagram how the compensation is done

for variations in IC0.

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