DEPARTMENT OF TECHNICAL

EDUCATION,A.P

Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics &
communication
Institute : Govt. Polytechnic,
Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code : EE-305
Topic : Special devices(4/6)
Duration : 50Mts.
Sub Topic : Features and
applications of UJT
Teaching Aids : Diagrams
EE-305.40
 Recap
• When VE less than VP the UJT is in cutoff
state.

• When VE less than VP the emitter current in UJT is

called leakage current .

• While UJT is in on condition UJT exhibits negative

resistance property.

• When VE exceeded Vv the UJT entered into

saturation region.
EE-305.40 2
Objectiv
es

Upon completion of this period the

student will be able to know

• About features of UJT.

• About the applications of UJT.

• Problems on UJT.

EE-305.40 3
UNI JUNCTION TRANSISTOR

DEVICE CIRCUIT SYMBOL

B
2

B1

EE-305.40 4
 APPLICATIONS OF UJT

• Phase control.

• Relaxation oscillator.

• Timing circuits.

• Switching.
EE-305.40 5
 APPLICATIONS OF UJT

• Pulse generation.

• Sine wave generator.

• Voltage or current regulator supplies.

EE-305.40 6
 FEATURES OF UJT

• A stable triggering voltage i.e., a fixed fraction of

applied inter

base voltage VBB.

• A very low value of triggering current.

EE-305.40 7
 FEATURES OF UJT

• A high pulse current capability.

• A negative resistance characteristic.

• Low cost.

EE-305.40 8
 Problems on UJT

• Problem 1

• Base one of a UJT has resistance of 4.8 k and the

value of intrinsic stand off ratio is 0.6 if VBB =10v
calculate value of voltage drop across RB1 , RB2
and base current.

EE-305.40 9
 Problems on UJT

• Given data

RB1 =4.8 K

η =0.6

VBB=10v

EE-305.40 10
 Problems on UJT

• Voltage across RB1 = η Vbb

= 0.6 * 10

= 6V

• η =RB1/(RB1+RB2)

= RB1/(RBB)
EE-305.40 11
 Problems on UJT

• RBB = RB1/ η

= 4.8*1000/0.6

= 8000 ohms

EE-305.40 12
 ON UJT
Problems on UJT

• voltage across RB1 = ηVBB

= 0.6 * 10

= 6V

• Base current = VBB / RBB

= 10/8000

= 1.25 mA
EE-305.40
13
 Problems on UJT

• Problem 2

• A silicon UJT has an inter base resistance of 10 kΩ

and RB1 of 6 kΩ with zero emitter current. A
voltage of 20V is applied between the bases
determine

( i) RB2 (ii) η (iii) Base current (iv) peak

point voltage . (VD = 0.7V)
EE-305.40 14
 Problems on UJT
• Given data

RBB = 10k

RB1 = 6k

VBB = 10V

VD = 0 .7v

EE-305.40 15
 Problems on UJT

• i) RBB= RB1+RB2

• RB2= RBB-RB1

=10k - 6k

=4k.

EE-305.40 16
 Problems on UJT

• η = RB1/ (RB1 + RB2)

= 6 KΩ / (6 KΩ + 4 KΩ)

= 6 KΩ / 10 KΩ

= 0.6

EE-305.40 17
 Problems on UJT

• IB = VBB/ RBB

= 20 / 10000

= 2 mA

EE-305.40 18
 Problems on UJT

• VP = η VBB + VD

= 0.6 * 20 + 0.7

= 12.7 V

EE-305.40 19
 SUMMARY

• UJT is less expensive Device.

• UJT Generates stable oscillations.

• UJT is used to trigger SCR.

EE-305.40 20
 Quiz
• The inter base resistance of UJT when RB1 = 3K Ω
and RB2 = 5K Ω

• (a) 15 KΩ

• (b) 13K Ω

• (c) 8K Ω

• (d) 11K Ω

EE-305.40 21
 Frequently asked questions

1. List the various features of UJT?

2. List the various applications of UJT?

EE-305.40 22