Thyristors

A thyristor is the most important type of power semiconductor devices. They are extensively used in power electronic circuits. They are operated as bi-stable switches from non-conducting to conducting state. A thyristor is a four layer, semiconductor of p-n-p-n structure with three pn junctions. It has three terminals, the anode, cathode and the gate.

The Different types of Thyristors are:

1. 2. 3. 4.

Silicon Controlled Rectifier (SCR) TRIAC DIAC Gate Turn Off Thyristor (GTO)

The SCR is a four layer three terminal device with junctions as shown. The construction of SCR shows that the gate terminal is kept nearer the cathode. The approximate thickness of each layer and doping densities are as indicated in the figure. In terms of their lateral dimensions Thyristors are the largest semiconductor devices made.

VAK

tC tq t

IA Anode current begins to decrease Commutation Recovery t1 t2 t3 di dt Recombination t4 t5 t tq=device tc =circuit

off time off time

trr tq tc tgr

IH : After an SCR has been switched to the on state a certain minimum value of anode current is required to maintain the thyristor in this low impedance state. If the anode current is reduced below the critical holding current value, the thyristor cannot maintain the current through it and reverts to its off state usually is associated with turn off the device. IL : After the SCR has switched on, there is a minimum current required to sustain conduction. This current is called the latching current. associated with turn on and is usually greater than holding current.

1. 2. 3. 4. 5.

High voltage turn ON Gate triggering dv/dt triggering Light triggering Temperature turn ON

This is triggering without application of gate voltage with only application of a large voltage across the anode-cathode such that it is greater than the forward breakdown voltage. This type of turn on is destructive and should be avoided.

Gate triggering is the method practically employed to turn-on the thyristor. In this method a positive voltage pulse is applied at the gate of the thyristor. Turning ON of thyristor by gate triggering is simple, reliable and efficient, it is therefore the most usual method of firing the forward biased SCRs.

If a forward voltage is suddenly applied a charging current through junction capacitor may turn ON the SCR. If the rate of rise of forward voltage is high, the charging current would be more. This charging current plays the role of gate current and turns ON the SCR even if the gate signal is zero.

For light triggered SCR recess is made in the inner p layer. When this recess is irradiated, free charge carriers are generated. The pulse of light of appropriate wavelength is guided by optical fibers for irradiation. If the intensity of this light exceeds a certain value the SCR is turned ON. Such thyristors are called as light activated SCR (LASCR)

If the temperature of the thyristor is high, there will be an increase in charge carriers which would increase the leakage current. This would cause an increase in anode current & the thyristor may turn on. This type of turn on many cause thermal run away and is usually avoided.

1. 2. 3.

R triggering R-C triggering UJT triggering

If an SCR is forward-biased and a gate signal is applied, the device turns ON. Once the anode current is above IH, the gate loses control. The only way to turn OFF the SCR is to make the anode terminal negative with respect to the cathode or to decrease the anode current below IH. The process of SCR turnoff is called commutation

Reliable operation of a thyristor demands that its specified ratings are not exceeded. During turn-ON, di/dt may very high. Also there may be false triggering of SCR by high value of dv/dt. A thyristor must be protected against all such abnormal conditions for satisfactory and reliable operation of the SCR circuit and the equipment.

When the thyristor is forward biased and the gate pulse is applied to it the anode current begins to spread in the immediate neighborhood of the gate cathode junction. Now if the rate of rise of anode current is large as compared to the spread velocity of carriers local spots will be formed near the gate connection on account of high current density. This localized heating may destroy the thyristor.

If the rate of rise of applied voltage across the thyristor is suddenly high the device may get turned ON. Such a phenomenon of turning ON a thyristor must be avoided as it leads to false operation of the thyristor circuit. Typical values of dv/dt are 20 to 500 micro-sec.

When system voltage is more than the voltage rating of a single thyristor, SCRs are connected in a series string. These SCRs should have their V-I characteristics as close as possible. Also the voltage drop across each SCR should be same.

When current required by the load is more than the rated current of a single thyristor SCRs are connected in parallel. For equal sharing of currents I-V characteristics of the SCRs during forward conduction must be identical as far as possible.

1. 2. 3. 4.

Magnitude of latching and holding currents is more in GTO. On state voltage drop and the associated loss is more is a GTO. Gate drive circuits losses are more. Its reverse voltage blocking capability is less than its forward voltage blocking capability.

1. 2. 3.

GTO has faster switching speed It has more di/dt rating at turn ON GTO circuit configuration has lower size and weight as compared to thyristor circuit unit.

A diac is a two terminal five layer semiconductor bi-directional switching device. It can conduct in both directions. The device consists of two p-n-p-n sections in anti parallel as shown in figure. and are the two terminals of the device. Diac is mainly used for triggering triacs.

T1 T1 P N P N N P N P T2
Reverse conduction region VB02

I Forward conduction region

VB01 Blocking state

T2

A triac is a three terminal bi-directional switching thyristor device. It can conduct in both directions when it is triggered into the conduction state. The triac is equivalent to two SCRs connected in anti-parallel with a common gate. The characteristics of a triac is similar to that of an SCR, both in blocking and conducting states. A SCR can conduct in only one direction whereas triac can conduct in both directions.

MT1 G N2 MT2 P2 N3 P2 N1 P1 MT2 N1 P1 G MT1

N4

 I VB02

MT2(+) G(+) Ig2

VB01, VB01 - Breakover voltages Ig2 > Ig21 Ig1 V

V MT2() G()

VB01

The power semiconductor devices can be operated as switches by applying control signals to the gate terminal of Thyristors (and to the base of bi-polar transistor). The required output is obtained by varying the conduction time of these switching devices. Once a thyristor is in a conduction mode, the gate signal of either positive or negative magnitude has no effect. When a power semiconductor device is in a normal conduction mode, there is a small voltage drop across the device

1.

2.
3. 4. 5. 6. 7. 8. 9.

Uncontrolled turn on and turn off (e.g.: diode). Controlled turn on and uncontrolled turn off (e.g. SCR) Controlled turn on and off characteristics (e.g. BJT, MOSFET, GTO, SITH, IGBT, SIT, MCT). Continuous gate signal requirement (e.g. BJT, MOSFET, IGBT, SIT). Pulse gate requirement (e.g. SCR, GTO, MCT). Bipolar voltage withstanding capability (e.g. SCR). Unipolar voltage withstanding capability (e.g. BJT, MOSFET, GTO, IGBT, MCT). Bidirectional current capability (e.g.: Triac, RCT). Unidirectional current capability (e.g. SCR, GTO, BJT, MOSFET, MCT, IGBT, SITH, SIT & Diode).

Power Source

Thyristorised Power Controllers

Load Equipment
T measure o voltage, current, speed, temperature

Command Input

Control Unit

Measuring Unit

1.

2.

3.

4. 5.

6.
7. 8.

Control of AC and DC motor drives in rolling mills, paper and textile mills, traction vehicles, mine winders, cranes, excavators, rotary kilns, ventilation fans, compression etc. Uninterruptible and stand by power supplies for critical loads such as computers, special high tech power supplies for aircraft and space applications. Power control in metallurgical and chemical processes using arc welding, induction heating, melting, resistance heating, arc melting, electrolysis, etc. Static power compensators, transformer tap changers and static contactors for industrial power systems. Power conversion at the terminals of a HVDC transmission systems. High voltage supplies for electrostatic precipitators and x-ray generators. Illumination/light control for lighting in stages, theaters, homes and studios. Solid state power controllers for home/domestic appliances.

1. 2. 3. 4. 5. 6.

High efficiency due to low losses in the Thyristors. Long life and reduced/minimal maintenance due to the absence of mechanical wear. Control equipments using Thyristors are compact in size. Easy and flexibility in operation due to digital controls. Faster dynamic response compared to the electro mechanical converters. Lower acoustic noise when compared to electro magnetic controllers, relays and contactors.

1.

2.

3.

4. 5.

6.

7.

All the thyristorised power controllers generate harmonics (unwanted frequency components) due to the switching ON and OFF of the thyristors. These harmonics adversely affect the performance of the load connected to them. For example when the load are motors, there are additional power losses (harmonic power loss) torque harmonics, and increase in acoustic noise. The generated harmonics are injected into the supply lines and thus adversely affect the other loads/equipments connected to the supply lines. In some applications example: traction, there is interference with the commutation circuits due to the power supply line harmonics and due to electromagnetic radiation. The thyristorised AC to DC converters and AC to AC converters can operate at low power factor under some conditions. Special steps are then taken for correcting the line supply power factor (by installing PF improvement apparatus). The thyristorised power controllers have no short time over loading capacity and therefore they must be rated for maximum loading conditions. This leads to an increase in the cost of the equipment. Special protection circuits must be employed in thyristorised power controllers in order to protect and safe guard the expensive thyristor devices. This again adds to the system cost.

1.

2.
3. 4. 5. 6.

Diode rectifiers (uncontrolled rectifiers). Line commutated converters or AC to DC converters (controlled rectifiers) AC voltage (RMS voltage) controllers (AC to AC converters). Cyclo converters (AC to AC converters at low output frequency). DC choppers (DC to DC converters). Inverters (DC to AC converters).

A power module package should have the following five characteristics:

1. 2. 3. 4. 5.

Electrical isolation of the base plate from the semiconductor Good thermal performance Good electrical performance Long life/high reliability Low cost